| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zakutayev, Andriy
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2023Is Cu3-xP a Semiconductor, a Metal, or a Semimetal?citations
- 2023Autonomous sputter synthesis of thin film nitrides with composition controlled by Bayesian optimization of optical plasma emissioncitations
- 2023Is Cu 3-x P a Semiconductor, a Metal, or a Semimetal?citations
- 2022Crystallize It before It diffusescitations
- 2022Prediction and realisation of high mobility and degenerate p-type conductivity in CaCuP thin films
- 2022Prediction and realisation of high mobility and degenerate p-type conductivity in CaCuP thin films.
- 2020Templated growth of metastable polymorphs on amorphous substrates with seed layerscitations
- 2020Wurtzite materials in alloys of rock salt compoundscitations
- 2019Electron scattering mechanisms in polycrystalline sputtered zinc tin oxynitride thin filmscitations
- 2018The 2019 materials by design roadmapcitations
- 2018Stabilization of wide band-gap p-type wurtzite MnTe thin films on amorphous substratescitations
- 2018Implications of heterostructural alloying for enhanced piezoelectric performance of (Al,Sc)Ncitations
- 2018Combinatorial Nitrogen Gradients in Sputtered Thin Filmscitations
- 2018Negative-pressure polymorphs made by heterostructural alloyingcitations
- 2018Characterization of Elastic Modulus Across the (Al 1– x Sc x )N System Using DFT and Substrate-Effect-Corrected Nanoindentationcitations
- 2017Using heterostructural alloying to tune the structure and properties of the thermoelectric Sn1−xCaxSecitations
- 2017Novel phase diagram behavior and materials design in heterostructural semiconductor alloyscitations
- 2017Novel phase diagram behavior and materials design in heterostructural semiconductor alloyscitations
- 2017Monte Carlo simulations of disorder in <math><mrow><mi>ZnSn</mi><msub><mi mathvariant='normal'>N</mi><mn>2</mn></msub></mrow></math> and the effects on the electronic structurecitations
- 2017Using heterostructural alloying to tune the structure and properties of the thermoelectric Sn 1- x Ca x Secitations
- 2017Design of metastable tin titanium nitride semiconductor alloyscitations
- 2016A review of defects and disorder in multinary tetrahedrally bonded semiconductors [Defects and disorder in multinary tetrahedrally bonded semiconductors studied by experiment and theory]citations
- 2016Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structurescitations
- 2016Synthesis and characterization of (Sn,Zn)O alloyscitations
- 2015Design of Semiconducting Tetrahedral <math display="inline"> <mrow> <msub> <mrow> <mi>Mn</mi> </mrow> <mrow> <mn>1</mn> <mo>₋</mo> <mi>x</mi> </mrow> </msub> <msub> <mrow> <mi>Zn</mi> </mrow> <mrow> <mi>x</mi> </mrow> </msub> <mi mathvariant="normal">O</mi> </mrow> </math> Alloys and Their Application to Solar Water Splittingcitations
- 2012Surface Origin of High Conductivities in Undoped In2O3 Thin Filmscitations
Places of action
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article
Combinatorial Nitrogen Gradients in Sputtered Thin Films
Abstract
High-throughput synthesis and characterization methods can significantly accelerate the rate of experimental research. For physical vapor deposition (PVD), these methods include combinatorial sputtering with intentional gradients of metal/metalloid composition, temperature, and thickness across the substrate. However, many other synthesis parameters still remain out of reach for combinatorial methods. Here, we extend combinatorial sputtering parameters to include gradients of gaseous elements in thin films. Specifically, a nitrogen gradient was generated in a thin film sample library by placing two MnTe sputtering sources with different gas flows (Ar and Ar/N2) opposite of one another during the synthesis. The nitrogen content gradient was measured along the sample surface, correlating with the distance from the nitrogen source. The phase, composition, and optoelectronic properties of the resulting thin films change as a function of the nitrogen content. This work shows that gradients of gaseous elements ...