693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kessels, W. M. M.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (161/161 displayed)
- 2024Atomic layer deposition of transition metal chalcogenide TaSx using Ta[N(CH3)2]3[NC(CH3)3] precursor and H2S plasma
- 2024Surface passivation approaches for silicon, germanium, and III–V semiconductorscitations
- 2024Structural Aspects of MoSx Prepared by Atomic Layer Deposition for Hydrogen Evolution Reactioncitations
- 2024Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalystscitations
- 2024Low Surface Recombination in Hexagonal SiGe Alloy Nanowires:Implications for SiGe-Based Nanolaserscitations
- 2024Low Surface Recombination in Hexagonal SiGe Alloy Nanowirescitations
- 2023Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °Ccitations
- 2023Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °Ccitations
- 2023Computational investigation of precursor blocking during area-selective atomic layer deposition using aniline as a small molecule inhibitorcitations
- 2023Computational investigation of precursor blocking during area-selective atomic layer deposition using aniline as a small molecule inhibitorcitations
- 2023In Situ IR SpectroscopyStudies of AtomicLayer-Deposited SnO2 on Formamidinium-Based Lead Halide Perovskitecitations
- 2023In Situ IR SpectroscopyStudies of AtomicLayer-Deposited SnO2 on Formamidinium-Based Lead Halide Perovskitecitations
- 2023MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barriercitations
- 2023MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barriercitations
- 2023ALD-grown two-dimensional TiSx metal contacts for MoS2 field-effect transistorscitations
- 2022Growth Mechanism and Film Properties of Atomic-Layer-Deposited Titanium Oxysulfidecitations
- 2022Surface chemistry during Atomic Layer Deposition of Pt studied with vibrational sum-frequency generationcitations
- 2022Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistrycitations
- 2022Controlling transition metal atomic ordering in two-dimensional Mo1- xW xS2alloyscitations
- 2022Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cellscitations
- 2022Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cellscitations
- 2022Atomic layer deposition of conductive and semiconductive oxidescitations
- 2022Effective Hydrogenation of Poly-Si Passivating Contacts by Atomic-Layer-Deposited Nickel Oxidecitations
- 2022POx/Al2O3 stacks for surface passivation of Si and InPcitations
- 2022Plasma-Enhanced Atomic Layer Deposition of HfO2 with Substrate Biasing: Thin Films for High-Reflective Mirrorscitations
- 2021Conformal Growth of Nanometer-Thick Transition Metal Dichalcogenide TiSx‑NbSx Heterostructures over 3D Substrates by Atomic Layer Deposition: Implications for Device Fabricationcitations
- 2021On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performancecitations
- 2021Surface passivation of germanium by atomic layer deposited Al2O3 nanolayerscitations
- 2021Surface passivation of germanium by atomic layer deposited Al2O3 nanolayerscitations
- 2021Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ionscitations
- 2021Excellent surface passivation of germanium by a-Si:H/Al2O3 stackscitations
- 2020Self-aligned local contact opening and n+ diffusion by single-step laser doping from POx/Al2O3 passivation stackscitations
- 2020Self-aligned local contact opening and n+ diffusion by single-step laser doping from POx/Al2O3 passivation stackscitations
- 2020The chemistry and energetics of the interface between metal halide perovskite and atomic layer deposited metal oxidescitations
- 2020Probing the origin and suppression of vertically oriented nanostructures of 2D WS2 layerscitations
- 2020Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: An experimental and computational studycitations
- 2020Improved Passivation of n-Type Poly-Si Based Passivating Contacts by the Application of Hydrogen-Rich Transparent Conductive Oxidescitations
- 2020Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasmacitations
- 2020Thermal and Plasma Enhanced Atomic Layer Deposition of Al[sub 2]O[sub 3] on GaAs Substratescitations
- 2019Chemical analysis of the interface between hybrid organic−inorganic perovskite and atomic layer deposited Al2O3citations
- 2019Performance and thermal stability of an a-Si:H/TiOx/Yb stack as an electron-selective contact in silicon heterojunction solar cellscitations
- 2019Plasma-assisted ALD of LiPO(N) for solid state batteriescitations
- 2019Enhancement of the photocurrent and efficiency of CdTe solar cells suppressing the front contact reflection using a highly-resistive ZnO buffer layercitations
- 2019Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reactioncitations
- 2018Pt-graphene contacts fabricated by plasma functionalization and atomic layer depositioncitations
- 2018Investigation of crystalline silicon surface passivation by positively charged PO x /Al 2 O 3 stackscitations
- 2018Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography:
- 2018Characterization of nano-porosity in molecular layer deposited films:
- 2018Passivating electron-selective contacts for silicon solar cells based on an a-Si:H/TiOx stack and a low work function metalcitations
- 2018Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasingcitations
- 2018Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics
- 2018Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasmacitations
- 2018Passivating electron-selective contacts for silicon solar cells based on an a-Si:H/TiO x stack and a low work function metalcitations
- 2018Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin filmscitations
- 2018Characterization of nano-porosity in molecular layer deposited filmscitations
- 2018Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographiescitations
- 2018Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS 2 :Large area, thickness control and tuneable morphologycitations
- 2018Low resistivity HfN : X grown by plasma-assisted ALD with external rf substrate biasingcitations
- 2018Isotropic Atomic Layer Etching of ZnO on 2D and 3D substrates, using acetylacetone and O2 plasma:
- 2017Plasma-assisted atomic layer deposition of HfNx: tailoring the film properties by the plasma gas compositioncitations
- 2017Atomic layer deposition for perovskite solar cells:Research status, opportunities and challengescitations
- 2017Atomic layer deposition of highly dispersed Pt nanoparticles on a high surface area electrode backbone for electrochemical promotion of catalysiscitations
- 2017Atomic layer deposition of highly dispersed Pt nanoparticles on a high surface area electrode backbone for electrochemical promotion of catalysis
- 2017Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasmacitations
- 2017On the synergistic effect of inorganic/inorganic barrier layers: an ellipsometric porosimetry investigationcitations
- 2017Towards the implementation of atomic layer deposited In 2 O 3 :H in silicon heterojunction solar cellscitations
- 2017Strong suppression of surface recombination in InGaAs nanopillars
- 2017Effective surface passivation of InP nanowires by atomic-layer-deposited Al 2 O 3 with PO x interlayercitations
- 2017Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenchescitations
- 2017Graphene devices with bottom-up contacts by area-selective atomic layer depositioncitations
- 2017Atomic layer deposition of aluminum fluoride using Al(CH 3 ) 3 and SF 6 plasmacitations
- 2016On the growth, percolation and wetting of silver thin films grown by atmospheric-plasma enhanced spatial atomic layer depositioncitations
- 2016Dynamic ellipsometric porosimetry investigation of permeation pathways in moisture barrier layers on polymerscitations
- 2016In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pdcitations
- 2016Plasma-assisted ALD of LiPO(N) for solid state batteriescitations
- 2016Metal-insulator-semiconductor nanowire network solar cellscitations
- 2016Device architectures with nanocrystalline mesoporous scaffolds and thin compact layers for flexible perovskite solar cells and modules
- 2015Atomic layer etching : what can we learn from atomic layer deposition?citations
- 2015A spatial ALD oxide passivation module in an all-spatial etch-passivation cluster conceptcitations
- 2015Role of surface termination in atomic layer deposition of silicon nitridecitations
- 2014Influence of stochiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz filmscitations
- 2014Interaction between O2 and ZnO films probed by time-dependent second-harmonic generationcitations
- 2014Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD Sr x Ti y O z filmscitations
- 2014On the role of nanoporosity in controlling the performance of moisture permeation barrier layerscitations
- 2013Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopycitations
- 2013Room-temperature atomic layer deposition of platinumcitations
- 2013Passivation of n+-type Si surfaces by low temperature processed SiO2/Al2O3 stackcitations
- 2013History of atomic layer deposition and its relationship with the American Vacuum Societycitations
- 2013Influence of oxygen exposure on the nucleation of platinum atomic layer deposition : consequences for film growth, nanopatterning, and nanoparticle synthesiscitations
- 2013Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growthcitations
- 2013Alternative technology concepts for low-cost and high-speed 2D and 3D interconnect manufacturing
- 2013C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopycitations
- 2013Direct-wire atomic layer deposition of high-quality Pt nanostructures : selective growth conditions and seed layer requirementscitations
- 2013Catalytic surface reactions during nucleation and growth of atomic layer deposition of noble metals : a case study for platinumcitations
- 2013A new concept for spatially divided deep reactive ion etching with ALD based passivationcitations
- 2012Concept of spatially-divided deep reactive ion etching of si using oxide atomic layer deposition in the passivation cycle
- 2012Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interfacecitations
- 2012Supported core/shell bimetallic nanoparticles synthesis by atomic layer depositioncitations
- 2012Status and prospects of Al2O3 –based surface passivation schemes for silicon solar cellscitations
- 2012Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx: H stackscitations
- 2012Dehydrogenation reactions during atomic layer deposition of Ru using O2citations
- 2012CO3O4 as anode material for thin film micro-batteries prepared by remote plasma atomic layer depositioncitations
- 2012A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivationcitations
- 2012Plasma-enhanced chemical vapor deposition of aluminum oxide using ultrashort precursor injection pulsescitations
- 2012Atomic layer deposition for photovoltaics : applications and prospects for solar cell manufacturingcitations
- 2012Substrate biasing during plasma-assisted ALD for crystalline phase-control of TiO2 thin filmscitations
- 2012Analysis of blister formation in spatial ALD Al 2 O 3 for silicon surface passivationcitations
- 2011Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride or PE-ALD titanium nitride for void-free bottom-up copper electroplatingcitations
- 2011High surface passivation quality and thermal stability of ALD Al2O3 on wet chemical grown ultra-thin SiO2 on siliconcitations
- 2011Dielectric properties of thermal and plasma-assisted atomic layer deposition Al2O3 thin filmscitations
- 2011Ion and photon surface interaction during remote plasma ALD of metal oxidescitations
- 2011Remote plasma atomic layer deposition of thin films of electrochemically active LiCoO2citations
- 2011Plasma-assisted atomic layer deposition of SrTiO3 : stoichiometry and crystallization study by spectroscopic ellipsometrycitations
- 2011Ultra-thin aluminium oxide films deposited by plasma-enhanced atomic layer deposition for corrosion protectioncitations
- 2011Remote plasma atomic layer deposition of Co3O4 thin filmscitations
- 2011Atomic layer deposition of Ru from CpRu(CO2)Et using O2 gas and O2 plasmacitations
- 2011Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined with LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
- 2010Influence of the deposition temperature on the c-Si Surface passivation by Al2 O3 films synthesized by ALD and PECVDcitations
- 2010The influence of ions and photons during plasma-assited ALD of metal oxidescitations
- 2010Bis(cyclopentadienyl) zirconium(IV) amides as possible precursors for low pressure CVD and plasma-enhanced ALDcitations
- 2010Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processescitations
- 2010Expanding thermal plasma deposited a-Si:H thin films for surface passivation of c-Si waferscitations
- 2010Conformality of plasma-assisted ALD: physical processes and modelingcitations
- 2010Low temperature plasma-enhanced atomic layer deposition of metal oxide thin filmscitations
- 2009Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applicationscitations
- 2009In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer depositioncitations
- 2009Thermal and plasma enhanced atomic layer deposition of Al2O3 on GaAs substrates
- 2009Oxidized ALD-deposited titanium nitride films as a low-temperature alternative for enhancing the wettability of through-silicon via sidewalls
- 2009Expanding Thermal Plasma Deposition of a-Si:H Thin Films for Surface Passivation of c-Si Wafers
- 2009Thermal and plasma enhanced atomic layer deposition of Al2O3on GaAs substratescitations
- 2009Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopycitations
- 2009Remote plasma atomic layer deposition of Co3O4 thin films
- 2009The atomic hydrogen flux during microcrystalline silicon solar cell deposition
- 2009Surface Passivation Mechanism of Atomic Layer Deposited Al2O3 Films on c-Si Studied by Optical Second-Harmonic Generation
- 2009Low temperature plasma-enhanced atomic layer deposition of metal oxide thin filmscitations
- 2009Atomic hydrogen induced defect kinetics in hydrogenated amorphous silicon : an in situ real time study
- 2008Real-time study of α-Si:H/c-Si heterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generationcitations
- 2008Optical second-harmonic generation in thin film systemscitations
- 2008High efficiency n-type Si solar cells on Al2O3-passivated boron emitterscitations
- 2008Silicon surface passivation by hot-wire CVD Si thin films studied in situ surface spectroscopy
- 2008Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides : a case study for Al2O3citations
- 2008Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channelscitations
- 2008Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopycitations
- 2007On the film microstructure control by means of PE-CVD and PA-ALD
- 2007Optimization of plasma enhanced atomic layer deposition processes for oxides, nitrides and metals in the Oxford Instruments FlexAL reactorcitations
- 2007Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer depositioncitations
- 2007Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactorcitations
- 2007Transient depletion of source gases during materials processing: a case study on the plasma deposition of microcrystalline siliconcitations
- 2007Absolute in situ measurement of surface dangling bonds during a-Si:H growthcitations
- 2007Opportunities for plasma-assisted atomic layer depositioncitations
- 2007Film properties and in-situ optical analysis of TiO2 layers synthesized by remote plasma ALD
- 2007Film properties and in-situ optical analysis of TiO2 layers synthesized by remote plasma ALD
- 2006Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymerscitations
- 2005Surface-diffusion-controlled incorporation of nanosized voids during hydrogenated amorphous silicon film growthcitations
- 2004The a-Si:H growth mechanism and the role of H abstraction from the surface by SiH/sub 3/ radicals via an Eley-Rideal mechanismcitations
- 2003On the role of surface diffusion and its relation to the hydrogen incorporation during hydrogenated amorphous silicon growth
- 2003Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growthcitations
- 2003Structural film characteristics related to the passivation properties of high-rate (> 0.5 nm/s) plasma deposited a-SiN x :H
- 2003Influence of the high-temperature "firing" step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cellscitations
- 2002High-rate microcrystalline silicon for solar cells
- 2002High-rate deposition of a-SiNx:H for photovoltaic applications by the expanding thermal plasmacitations
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article
Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts
Abstract
<p>We utilize plasma-enhanced atomic layer deposition to synthesize two-dimensional Nb-doped WS<sub>2</sub> and Nb<sub>x</sub>W<sub>1-x</sub>S<sub>y</sub> alloys to expand the range of properties and improve the performance of 2D transition metal dichalcogenides for electronics and catalysis. Using a supercycle deposition process, films are prepared with compositions spanning the range from WS<sub>2</sub> to NbS<sub>3</sub>. While the W-rich films form crystalline disulfides, the Nb-rich films form amorphous trisulfides. Through tuning the composition of the films, the electrical resistivity is reduced by 4 orders of magnitude compared to pure ALD-grown WS<sub>2</sub>. To produce Nb-doped WS<sub>2</sub> films, we developed a separate ABC-type supercycle process in which a W precursor pulse precedes the Nb precursor pulse, thereby reducing the minimum Nb content of the film by a factor of 3 while maintaining a uniform distribution of the Nb dopant. Initial results are presented on the electrical and electrocatalytic performances of the films. Promisingly, the Nb<sub>x</sub>W<sub>1-x</sub>S<sub>y</sub> films of 10 nm thickness and composition x ≈ 0.08 are p-type semiconductors and have a low contact resistivity of (8 ± 1) × 10<sup>2</sup> Ω cm to Pd/Au contacts, demonstrating their potential use in contact engineering of 2D TMD transistors.</p>