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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bol, Ageeth
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2024Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalystscitations
- 2023Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °Ccitations
- 2023MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barriercitations
- 2022Growth Mechanism and Film Properties of Atomic-Layer-Deposited Titanium Oxysulfidecitations
- 2022Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistrycitations
- 2022Controlling transition metal atomic ordering in two-dimensional Mo1- xW xS2alloyscitations
- 2022Effects of the Structure and Temperature on the Nature of Excitons in the Mo0.6W0.4S2Alloycitations
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article
Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts
Abstract
<p>We utilize plasma-enhanced atomic layer deposition to synthesize two-dimensional Nb-doped WS<sub>2</sub> and Nb<sub>x</sub>W<sub>1-x</sub>S<sub>y</sub> alloys to expand the range of properties and improve the performance of 2D transition metal dichalcogenides for electronics and catalysis. Using a supercycle deposition process, films are prepared with compositions spanning the range from WS<sub>2</sub> to NbS<sub>3</sub>. While the W-rich films form crystalline disulfides, the Nb-rich films form amorphous trisulfides. Through tuning the composition of the films, the electrical resistivity is reduced by 4 orders of magnitude compared to pure ALD-grown WS<sub>2</sub>. To produce Nb-doped WS<sub>2</sub> films, we developed a separate ABC-type supercycle process in which a W precursor pulse precedes the Nb precursor pulse, thereby reducing the minimum Nb content of the film by a factor of 3 while maintaining a uniform distribution of the Nb dopant. Initial results are presented on the electrical and electrocatalytic performances of the films. Promisingly, the Nb<sub>x</sub>W<sub>1-x</sub>S<sub>y</sub> films of 10 nm thickness and composition x ≈ 0.08 are p-type semiconductors and have a low contact resistivity of (8 ± 1) × 10<sup>2</sup> Ω cm to Pd/Au contacts, demonstrating their potential use in contact engineering of 2D TMD transistors.</p>