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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kumar, Ashok
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2023Strontium-Substituted Nanohydroxyapatite-Incorporated Poly(lactic acid) Composites for Orthopedic Applications: Bioactive, Machinable, and High-Strength Propertiescitations
- 2023Sb2Se3 Nanosheet Film-Based Devices for Ultraviolet Photodetection and Resistive Switchingcitations
- 2023Design consideration and recent developments in flexible, transparent and wearable antenna technology: A reviewcitations
- 2021Effect of Wheat Straw Ash on Fresh and Hardened Concrete Reinforced with Jute Fibercitations
- 2020Improved Bone Regeneration in Rabbit Bone Defects Using 3D Printed Composite Scaffolds Functionalized with Osteoinductive Factorscitations
- 2020Tin titanate – the hunt for a new ferroelectric perovskitecitations
- 2019Tin titanate – the hunt for a new ferroelectric perovskitecitations
- 2018Optically controlled polarization in highly oriented ferroelectric thin filmscitations
- 2017Optically controlled polarization in highly oriented ferroelectric thin filmscitations
- 2017Palladium-based ferroelectrics and multiferroics:theory and experimentcitations
- 2017Palladium-based ferroelectrics and multiferroics : theory and experimentcitations
- 2016Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin filmscitations
- 2015Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr 0.2 Ti 0.8 )O 3 thin filmscitations
- 2014Dynamic nanocrystal response and high temperature growth of carbon nanotube-ferroelectric hybrid nanostructurecitations
- 2014Faceting oscillations in nano-ferroelectricscitations
- 2013Compositional engineering of BaTiO3/(Ba,Sr)TiO3 ferroelectric superlatticescitations
- 2012Magnon Raman spectroscopy and in-plane dielectric response in BiFeO3:Relation to the Polomska transitioncitations
- 2012Ferroelectric and Dielectric Properties of BaTiO3/Ba0.30Sr0.70TiO3 Superlatticescitations
- 2010Magnetic effects on dielectric and polarization behavior of multiferroic heterostructurescitations
- 2010Evaluation of boronate-containing polymer brushes and gels as substrates for carbohydrate-mediated adhesion and cultivation of animal cells.citations
- 2010Fabrication and characterization of the multiferroic birelaxor lead-iron-tungstate/lead-zirconate-titanatecitations
Places of action
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article
Sb2Se3 Nanosheet Film-Based Devices for Ultraviolet Photodetection and Resistive Switching
Abstract
<p>The development of multifunctional devices could represent a significant advancement in meeting the need for nano and micro technologies. Therefore, we have developed a Ag/Sb<sub>2</sub>Se<sub>3</sub>/FTO-based multifunction device having nanostructures, which works as an ultraviolet (UV) photodetector and a switching device. Our theory suggests how oxygen formation leads to detection in the UV range rather than detection in the infrared range, which is the natural detection range of Sb<sub>2</sub>Se<sub>3</sub>. The m-s-m photodetector device is based on the photoconductive phenomenon, and ultrafast transient absorption spectroscopy has been extensively used to investigate the charge carrier dynamics of Sb<sub>2</sub>Se<sub>3</sub> films of 500 nm. At two distinct excitations, 375 nm UV and 532 nm visible light, and a pulse energy of 1 J per pulse, the effect of annealing on the charge carrier relaxation of the films was investigated. The kinetics of the hot charge carrier’s decay and recombination were studied for both as-grown and annealed films. The proposed theory is analyzed with the help of X-ray photoelectron spectroscopy and density functional theory studies. The device shows external quantum efficiency values of 2.9 and 1.3 at 375 and 386 nm, respectively. The rise time to fall time ratio was 0.29/0.30 s at 375 nm irradiation at 2 V bias at a power density of 32 mW/cm<sup>2</sup>. The same device shows bipolar resistive switching, in which resistance shifts from a high resistance state to a low resistance state in a voltage sweep from −1 to 0 V and then 0 to 1 V. The result of the switching phenomenon is reasonably justified by the electrochemical metallization phenomenon. An outstanding accomplishment in electronic devices is combining two different features on a single device.</p>