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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Seo, Sehun
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2021Growth of Transition Metal Dichalcogenide Heterojunctions with Metal Oxides for Metal–Insulator–Semiconductor Capacitorscitations
- 2019Direct In Situ Growth of Centimeter-Scale Multi-Heterojunction MoS 2 /WS 2 /WSe 2 Thin-Film Catalyst for Photo-Electrochemical Hydrogen Evolutioncitations
- 2017High critical current density over 1MAcm(-2) at 13T in BaZrO3 incorporated Ba(Fe,Co)(2)As-2 thin filmcitations
- 2016Thermally activated flux flow in superconducting epitaxial FeSe0.6Te0.4 thin filmcitations
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article
Growth of Transition Metal Dichalcogenide Heterojunctions with Metal Oxides for Metal–Insulator–Semiconductor Capacitors
Abstract
The coupling of transition metal dichalcogenides (TMDs) and other materials offers significant synergistic effects; however, the fabrication of artificial multiheterojunction (MHJ) TMDs is a significant challenge owing to complex processes, including layer-by-layer stacking and transfer of free-standing oxide layers. Herein, we developed a straightforward method using sequential pulsed laser deposition (PLD) to fabricate MHJ-TMD thin films. The artificially designed TMD-based (WSe2/MoS2) superlattice and TMD/oxide-based MHJ thin films were successfully synthesized on the centimeter-scale silicon-based substrate via an in situ PLD process. The PLD-grown MHJ-TMD films exhibited good uniformity, layer-by-layer stacking, and interlayer coupling between each TMD layer. Also, we fabricated MHJ-TMD films as a metal-semiconductor/insulator-metal device to confirm their potential as an electronic device. We believe that our technique will widen the scope of TMD applications in different fields. © 2021 American Chemical Society.