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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Gorodetsky, Andrei
University of Birmingham
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2023Tunable THz flat zone plate based on stretchable single-walled carbon nanotube thin filmcitations
- 2021Fabrication of epitaxial W-doped VO2 nanostructured films for terahertz modulation using the solvothermal processcitations
- 2020Hot carrier dynamics in perovskite nanocrystal solids: role of the cold carriers, nanoconfinement, and the surfacecitations
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article
Fabrication of epitaxial W-doped VO2 nanostructured films for terahertz modulation using the solvothermal process
Abstract
We report a feasible and high-throughput method for high-quality W-doped VO<sub>2</sub> nanostructured epitaxial films on r-sapphire substrate fabrication. Single-phase, smooth vanadium dioxide thin films with uniform distribution of tungsten (up to 2.3%) are formed using the solvothermal process from ethylene glycol/water V<sup>4+</sup> and W<sup>6+</sup> solutions. Compositional analysis by X-ray photoelectron and energy-dispersive X-ray spectroscopy (XPS and EDX, respectively); structural analysis (X-ray diffraction, Raman spectroscopy, selected area electron diffraction (SAED)); and detailed analysis of the surface morphology and substrate–film interface using scanning electron microscopy, atomic force microscopy, and high-resolution transmission electron microscopy (SEM, AFM, HRTEM, respectively) confirm the formation of nanoscale (50–60 nm) epitaxial W:VO<sub>2</sub> (M<sub>1</sub>) on r-sapphire with epitaxial relationships (100)VO<sub>2</sub>∥(101̅2)Al<sub>2</sub>O<sub>3</sub> and [010]VO<sub>2</sub>∥[011̅0]Al<sub>2</sub>O<sub>3</sub>. The nanostructured films demonstrate excellent terahertz (THz) transmission properties: a phase transition temperature of 31 °C, a huge THz modulation depth of over 60%, and broad bandwidth (≥2 THz) operation. Hence, they can be efficiently used as active material for tunable THz manipulation devices.