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Zhao, Bo
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Publications (5/5 displayed)
- 2023Atomic layer deposition of yttrium oxide as a protective coating for lithium metal anodes
- 2023Crystalline tin disulfide by low-temperature plasma-enhanced 2 atomic layer deposition as an electrode material for Li-ion batteries 3 and CO2 electroreductioncitations
- 2020Thermal and plasma-enhanced atomic layer deposition of yttrium oxide films and the properties of water wettabilitycitations
- 2019Atomic layer deposition of thin films as model electrodes : a case study of the synergistic effect in Fe2O3-SnO2citations
- 2017Design of mechanically-optimised lattice structures for vibration isolation
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article
Thermal and plasma-enhanced atomic layer deposition of yttrium oxide films and the properties of water wettability
Abstract
The atomic layer deposition (ALD) of yttrium oxide (Y2O3) is investigated using the liquid precursor Y(EtCp)2(iPr-amd) as the yttrium source with thermal (H2O) and plasma-enhanced (H2O plasma and O2 plasma) processes, respectively. Saturation is confirmed for the growth of the Y2O3 films with each investigated reactant with a similar ALD window from 150 to 300 °C, albeit with a different growth rate. All of the as-deposited Y2O3 films are pure and smooth and have a polycrystalline cubic structure. The as-deposited Y2O3 films are hydrophobic with water contact angles >90°. The water contact angle gradually increased and the surface free energy gradually decreased as the film thickness increased, reaching a saturated value at a Y2O3 film thickness of ∼20 nm. The hydrophobicity was retained during post-ALD annealed at 500 °C in static air for 2 h. Exposure to polar and nonpolar solvents influences the Y2O3 water contact angle. The reported ALD process for Y2O3 films may find potential applications in the field of hydrophobic coatings.