| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Willson, C. Grant
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2020Spatial Control of the Self-assembled Block Copolymer Domain Orientation and Alignment on Photopatterned Surfacescitations
- 2020Unusual Thermal Properties of Certain Poly(3,5-disubstituted styrene)scitations
- 2019Strategies for Increasing the Rate of Defect Annihilation in the Directed Self-Assembly of High-χ Block Copolymerscitations
- 2017Directed Self-Assembly and Pattern Transfer of Five Nanometer Block Copolymer Lamellaecitations
- 2016A Hybrid Chemo-/Grapho-Epitaxial Alignment Strategy for Defect Reduction in Sub-10 nm Directed Self-Assembly of Silicon-Containing Block Copolymerscitations
- 2016Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymerscitations
- 2015Directed self assembly of block copolymers using chemical patterns with sidewall guiding lines, backfilled with random copolymer brushescitations
- 2012Oligosaccharide/silicon-containing block copolymers with 5 nm features for lithographic applicationscitations
Places of action
| Organizations | Location | People |
|---|
article
Strategies for Increasing the Rate of Defect Annihilation in the Directed Self-Assembly of High-χ Block Copolymers
Abstract
<p>Directed self-assembly (DSA) of high-χ block copolymer thin films is a promising approach for nanofabrication of features with length scale below 10 nm. Recent work has highlighted that kinetics are of crucial importance in determining whether a block copolymer film can self-assemble into a defect-free ordered state. In this work, different strategies for improving the rate of defect annihilation in the DSA of a silicon-containing, high-χ block copolymer film were explored. Chemo-epitaxial DSA of poly(4-methoxystyrene-block-4-trimethylsilylstyrene) with 5× density multiplication was implemented on 300 mm wafers by using production level nanofabrication tools, and the influence of different processes and material parameters on dislocation defect density was studied. It was observed that only at sufficiently low χN can the block copolymer assemble into well-aligned patterns within a practical time frame. In addition, there is a clear correlation between the rate of the lamellar grain coarsening in unguided self-assembly and the rate of dislocation annihilation in DSA. For a fixed chemical pattern, the density of kinetically trapped dislocation defects can be predicted by measuring the correlation length of the unguided self-assembly under the same process conditions. This learning enables more efficient screening of block copolymers and annealing conditions by rapid analysis of block copolymer films that were allowed to self-assemble into unguided (commonly termed fingerprint) patterns.</p>