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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Oliver, Rachel
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Topics
Publications (16/16 displayed)
- 2024Improved Sequentially Processed Cu(In,Ga)(S,Se)<sub>2</sub> by Ag Alloying
- 2024Room temperature quantum emitters in aluminum nitride epilayers on silicon
- 2023Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopycitations
- 2021Using pulsed mode scanning electron microscopy for cathodoluminescence studies on hybrid perovskite films
- 2021Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2019Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance.
- 2019Thick adherent diamond films on AlN with low thermal barrier resistancecitations
- 2019Thick, adherent diamond films on AlN with low thermal barrier resistancecitations
- 2017Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structurecitations
- 2017Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structurecitations
- 2017Stable Speckle Patterns for Nano-scale Strain Mapping up to 700 °C
- 2017Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth
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article
Thick adherent diamond films on AlN with low thermal barrier resistance
Abstract
<p>The growth of >100-μm-thick diamond layers adherent on aluminum nitride with low thermal boundary resistance between diamond and AlN is presented in this work. The thermal barrier resistance was found to be in the range of 16 m<sup>2</sup>·K/GW, which is a large improvement on the current state-of-the-art. While thick films failed to adhere on untreated AlN films, AlN films treated with hydrogen/nitrogen plasma retained the thick diamond layers. Clear differences in ζ-potential measurement confirm surface modification due to hydrogen/nitrogen plasma treatment. An increase in non-diamond carbon in the initial layers of diamond grown on pretreated AlN is seen by Raman spectroscopy. The presence of non-diamond carbon has minimal effect on the thermal barrier resistance. The surfaces studied with X-ray photoelectron spectroscopy revealed a clear distinction between pretreated and untreated samples. The surface aluminum goes from a nitrogen-rich environment to an oxygen-rich environment after pretreatment. A clean interface between diamond and AlN is seen by cross-sectional transmission electron microscopy.</p>