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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vieira, Emf
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Publications (4/4 displayed)
- 2021All-Oxide p-n Junction Thermoelectric Generator Based on SnOx and ZnO Thin Filmscitations
- 2019Highly sensitive thermoelectric touch sensor based on p-type SnOx thin filmcitations
- 2019Tuning electrical and thermoelectric properties of freestanding graphene oxide papers by carbon nanotubes and heat treatmentcitations
- 2019High-Performance mu-Thermoelectric Device Based on Bi2Te3/Sb2Te3 p-n Junctionscitations
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article
High-Performance mu-Thermoelectric Device Based on Bi2Te3/Sb2Te3 p-n Junctions
Abstract
A flexible and ultralight planar thermoelectric generator based on 15 thermocouples composed of n-type bismuth telluride (Bi2Te3) and p-type antimony telluride (Sb2Te3) legs (each with 400 nm thick) connected in series, on 25 mu m thick Kapton substrate, was fabricated with impressive power factor values of 2.7 and 0.8 mW K-2 m(-1) (at 298 K) for Bi2Te3 and Sb2Te3 films, respectively. The p-n junction thermoelectric device can generate a maximum open-circuit voltage and output power of 210 mV and 0.7 mu W (3.3 mW cm(-2)), respectively, for a temperature difference of 35 K, which is higher than the one observed for a conventional thermoelectric device with metallic contacts for p-n junctions. The results were combined with numerical simulations, showing a good match between the experimental and the numerical results. The current density versus voltage (J-V) characteristics of the fabricated p-n junctions revealed a diode behavior with a turn-on voltage of approximate to 0.3 V and an impressive rectifying ratio (I+IV/I-IV ) of approximate to 2 x 10(4).