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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lysevych, Mykhaylo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Core-shell GaN/AlGaN nanowires grown by selective area epitaxycitations
- 2022Nonpolar Al xGa1−xN/Al yGa1−yN multiple quantum wells on GaN nanowire for UV emissioncitations
- 2022Far-Field Polarization Engineering from Nonlinear Nanoresonatorscitations
- 2022Selective Area Growth of GaN Nanowirecitations
- 2021Narrow-Bandgap InGaAsP Solar Cell with TiO2 Carrier-Selective Contactcitations
- 2020Forward and Backward Switching of Nonlinear Unidirectional Emission from GaAs Nanoantennascitations
- 2019Second-harmonic generation in (111) gallium arsenide nanoantennas
- 2019 Ultrathin Ta 2 O 5 electron-selective contacts for high efficiency InP solar cells citations
- 2019InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splittingcitations
- 2019Ultrathin Ta2O5 electron-selective contacts for high efficiency InP solar cellscitations
- 2018Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layercitations
- 2017Improved photoelectrochemical performance of GaN nanopillar photoanodescitations
- 2017Void evolution and porosity under arsenic ion irradiation in GaAs1-xSbx alloyscitations
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article
InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting
Abstract
<p>While photoelectrochemical (PEC) water splitting is a very promising route toward zero-carbon energy, conversion efficiency remains limited. Semiconductors with narrower band gaps can absorb a much greater portion of the solar spectrum, thereby increasing efficiency. However, narrow band gap (∼1 eV) III-V semiconductor photoelectrodes have not yet been thoroughly investigated. In this study, the narrow band gap quaternary III-V alloy InGaAsP is demonstrated for the first time to have great potential for PEC water splitting, with the long-term goal of developing high-efficiency tandem PEC devices. TiO<sub>2</sub>-coated InGaAsP photocathodes generate a photocurrent density of over 30 mA/cm<sup>2</sup> with an onset potential of 0.45 V versus reversible hydrogen electrode, yielding an applied bias efficiency of over 7%. This is an excellent performance, given that nearly all power losses can be attributed to reflection losses. X-ray photoelectron spectroscopy and photoluminescence spectroscopy show that InGaAsP and TiO<sub>2</sub> form a type-II band alignment, greatly enhancing carrier separation and reducing recombination losses. Beyond water splitting, the tunable band gap of InGaAsP could be of further interest in other areas of photocatalysis, including CO<sub>2</sub> reduction.</p>