| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Crovetto, Andrea
Helmholtz-Zentrum Berlin für Materialien und Energie
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (38/38 displayed)
- 2023Is Cu3-xP a Semiconductor, a Metal, or a Semimetal?citations
- 2023Is Cu 3-x P a Semiconductor, a Metal, or a Semimetal?citations
- 2022An open-access database and analysis tool for perovskite solar cells based on the FAIR data principlescitations
- 2022Crystallize It before It diffusescitations
- 2022Prediction and realisation of high mobility and degenerate p-type conductivity in CaCuP thin films
- 2022Prediction and realisation of high mobility and degenerate p-type conductivity in CaCuP thin films.
- 2021An open-access database and analysis tool for perovskite solar cells based on the FAIR data principlescitations
- 2021Semitransparent Selenium Solar Cells as a Top Cell for Tandem Photovoltaicscitations
- 2020Monolithic thin-film chalcogenide–silicon tandem solar cells enabled by a diffusion barriercitations
- 2020Parallel evaluation of the BiI3, BiOI, and Ag3BiI6 layered photoabsorberscitations
- 2020Parallel evaluation of the BiI 3 , BiOI, and Ag 3 BiI 6 layered photoabsorberscitations
- 2019Monolithic Thin-Film Chalcogenide-Silicon Tandem Solar Cells Enabled by a Diffusion Barrier
- 2019Shining Light on Sulfide Perovskites: LaYS 3 Material Properties and Solar Cellscitations
- 2019Shining Light on Sulfide Perovskites: LaYS3 Material Properties and Solar Cellscitations
- 2018Non-destructive Thickness Mapping of Wafer-Scale Hexagonal Boron Nitride Down to a Monolayercitations
- 2017Sulfide perovskites for solar energy conversion applications: computational screening and synthesis of the selected compound LaYS 3citations
- 2017Investigation of Cu 2 ZnSnS 4 nanoparticles for thin-film solar cell applicationscitations
- 2017How the relative permittivity of solar cell materials influences solar cell performancecitations
- 2017The effect of dopants on grain growth and PL in CZTS nanoparticle thin films for solar cell applications
- 2017Na-assisted grain growth in CZTS nanoparticle thin films for solar cell applications
- 2017Temperature dependent photoreflectance study of Cu2SnS3 thin films produced by pulsed laser depositioncitations
- 2017Investigation of Cu2ZnSnS4 nanoparticles for thin-film solar cell applicationscitations
- 2017Sulfide perovskites for solar energy conversion applications: computational screening and synthesis of the selected compound LaYS3citations
- 2016Cu2ZnSnS4 solar cells: Physics and technology by alternative tracks
- 2016Behind the Nature of Titanium Oxide Excellent Surface Passivation and Carrier Selectivity of c-Si
- 2016Semiconductor band alignment from first principles: a new nonequilibrium Green's function method applied to the CZTSe/CdS interface for photovoltaicscitations
- 2016Synthesis of ligand-free CZTS nanoparticles via a facile hot injection routecitations
- 2015Optical properties and surface characterization of pulsed laser-deposited Cu2ZnSnS4 by spectroscopic ellipsometrycitations
- 2015Chalcogenide compounds made by pulsed laser deposition at 355 and 248 nm
- 2015Morphology of Copper Tin Sulfide Films Grown by Pulsed Laser Deposition at 248 and 355 nm
- 2015Optical properties and surface characterization of pulsed laser-deposited Cu 2 ZnSnS 4 by spectroscopic ellipsometrycitations
- 2015ZnS top layer for enhancement of the crystallinity of CZTS absorber during the annealingcitations
- 2014Electrical characterization of sputtered ZnO:Al films with microprobe technique
- 2014Optical properties and secondary phase identification in PLD-grown Cu 2 ZnSnS 4 for thin-film photovoltaics
- 2014Optical properties and secondary phase identification in PLD-grown Cu2ZnSnS4 for thin-film photovoltaics
- 2014Annealing in sulfur of CZTS nanoparticles deposited through doctor blading
- 2014Study of Grain Growth of CZTS Nanoparticles Annealed in Sulfur Atmosphere
- 2014Pulsed laser deposition of Cu-Sn-S for thin film solar cells
Places of action
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article
Non-destructive Thickness Mapping of Wafer-Scale Hexagonal Boron Nitride Down to a Monolayer
Abstract
The availability of an accurate, nondestructive method for measuring thickness and continuity of two-dimensional (2D) materials with monolayer sensitivity over large areas is of pivotal importance for the development of new applications based on these materials. While simple optical contrast methods and electrical measurements are sufficient for the case of metallic and semiconducting 2D materials, the low optical contrast and high electrical resistivity of wide band gap dielectric 2D materials such as hexagonal boron nitride (hBN) hamper their characterization. In this work, we demonstrate a nondestructive method to quantitatively map the thickness and continuity of hBN monolayers and bilayers overlarge areas. The proposed method is based on acquisition and subsequent fitting of ellipsometry spectra of hBN on Si/SiO<sub>2</sub> substrates. Once a proper optical model is developed, it becomes possible to identify and map the commonly observed polymer residuals from the transfer process and obtain submonolayer thickness sensitivity for the hBNfilm. With some assumptions on the optical functions of hBN, the thickness of an as-transferred hBN monolayer on SiO<sub>2</sub> is measured as 4.1 Å ± 0.1 Å, whereas the thickness of an air-annealedhBN monolayer on SiO<sub>2</sub> is measured as 2.5 Å ±0.1 Å. We argue that the difference in the two measured values is due to the presence of a water layer trapped between the SiO<sub>2</sub> surface and the hBN layer in the latter case. The procedure can be fully automated to wafer scale and extended to other 2D materials transferred onto any polished substrate, as long as their optical functions are approximately known.