| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Whelan, Patrick Rebsdorf
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Mapping nanoscale carrier confinement in polycrystalline graphene by terahertz spectroscopycitations
- 2022Chemical Vapor-Deposited Graphene on Ultraflat Copper Foils for van der Waals Hetero-Assemblycitations
- 2021Nonlinear conductivity response of graphene on thin polymeric film detected by reflection-mode air-plasma THz-TDS
- 2020Fermi velocity renormalization in graphene probed by terahertz time-domain spectroscopycitations
- 2019Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphenecitations
- 2019Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphenecitations
- 2018Conductivity mapping of graphene on polymeric films by terahertz time-domain spectroscopycitations
- 2018Non-destructive Thickness Mapping of Wafer-Scale Hexagonal Boron Nitride Down to a Monolayercitations
- 2017Sputtering an exterior metal coating on copper enclosure for large-scale growth of single-crystalline graphene:Papercitations
- 2017Sputtering an exterior metal coating on copper enclosure for large-scale growth of single-crystalline graphenecitations
- 2016Copper Oxidation through Nucleation Sites of Chemical Vapor Deposited Graphenecitations
- 2016Transfer and characterization of large-area CVD graphene for transparent electrode applications
Places of action
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article
Non-destructive Thickness Mapping of Wafer-Scale Hexagonal Boron Nitride Down to a Monolayer
Abstract
The availability of an accurate, nondestructive method for measuring thickness and continuity of two-dimensional (2D) materials with monolayer sensitivity over large areas is of pivotal importance for the development of new applications based on these materials. While simple optical contrast methods and electrical measurements are sufficient for the case of metallic and semiconducting 2D materials, the low optical contrast and high electrical resistivity of wide band gap dielectric 2D materials such as hexagonal boron nitride (hBN) hamper their characterization. In this work, we demonstrate a nondestructive method to quantitatively map the thickness and continuity of hBN monolayers and bilayers overlarge areas. The proposed method is based on acquisition and subsequent fitting of ellipsometry spectra of hBN on Si/SiO<sub>2</sub> substrates. Once a proper optical model is developed, it becomes possible to identify and map the commonly observed polymer residuals from the transfer process and obtain submonolayer thickness sensitivity for the hBNfilm. With some assumptions on the optical functions of hBN, the thickness of an as-transferred hBN monolayer on SiO<sub>2</sub> is measured as 4.1 Å ± 0.1 Å, whereas the thickness of an air-annealedhBN monolayer on SiO<sub>2</sub> is measured as 2.5 Å ±0.1 Å. We argue that the difference in the two measured values is due to the presence of a water layer trapped between the SiO<sub>2</sub> surface and the hBN layer in the latter case. The procedure can be fully automated to wafer scale and extended to other 2D materials transferred onto any polished substrate, as long as their optical functions are approximately known.