| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Maschio, Lorenzo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024A computational study of the negative LiIn modified anode and its interaction with β-Li3PS4 solid-electrolyte for battery applicationscitations
- 2023Experimental and computational study of the role of defects and secondary phases on the thermoelectric properties of TiNi<sub />1+xSn<sub /> (0 ≤ x ≤ 0.12) half Heusler compoundscitations
- 2020Key Role of Defects in Thermoelectric Performance of TiMSn (M = Ni, Pd, and Pt) Half-Heusler Alloyscitations
- 2019Evolutionary Algorithm-Based Crystal Structure Prediction for Copper (I) Fluoridecitations
- 2018Thermoelectric Properties of p-Type Cu2O, CuO, and NiO from Hybrid Density Functional Theorycitations
- 2017Effect of Benzoic Acid as a Modulator in the Structure of UiO-66: An Experimental and Computational Studycitations
- 2017One step toward a new generation of C-MOS compatible oxide PN junctionscitations
- 2007Fast local-MP2 method with density-fitting for crystals. II. Test calculations and application to the carbon dioxide crystalcitations
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article
One step toward a new generation of C-MOS compatible oxide PN junctions
Abstract
Heterostructures formed by La0.7Sr0.3MnO3/ZnO (LSMO/ZnO) interfaces exhibit extremely interesting electronic properties making them promising candidates for novel oxide pn junctions, with multifunctional features. In this work, the structure of the interface is studied through a combined experimental/theoretical approach. Heterostructures were grown epitaxially and homogeneously on 4″ silicon wafers, characterized by advanced electron microscopy imaging and spectroscopy and simulated by ab initio density functional theory calculations. The simulation results suggest that the most stable interface configuration is composed of the (001) face of LSMO, with the LaO planes exposed, in contact with the (112̅0) face of ZnO. The ab initio predictions agree well with experimental high-angle annular dark field scanning transmission electron microscopy images and confirm the validity of the suggested structural model. Electron energy loss spectroscopy confirms the atomic sharpness of the interface. From statistical parameter estimation theory, it has been found that the distances between the interfacial planes are displaced from the respective ones of the bulk material. This can be ascribed to the strain induced by the mismatch between the lattices of the two materials employed.