| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Rijnders, Guus
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Enhanced Piezoelectricity by Polarization Rotation through Thermal Strain Manipulation in PbZr<sub>0.6</sub>Ti<sub>0.4</sub>O<sub>3</sub> Thin Films
- 2024The effect of intrinsic magnetic order on electrochemical water splittingcitations
- 2024Stabilizing Perovskite Pb(Mg<sub>0.33</sub>Nb<sub>0.67</sub>)O<sub>3</sub>-PbTiO<sub>3</sub> Thin Films by Fast Deposition and Tensile Mismatched Growth Templatecitations
- 2023On the importance of the SrTiO3 template and the electronic contact layer for the integration of phase-pure low hysteretic Pb(Mg0.33Nb0.67)O3-PbTiO3 layers with Sicitations
- 2021Growth and crystallization of sio2/geo2 thin films on si(100) substratescitations
- 2021Growth and crystallization of sio 2 /geo 2 thin films on si(100) substratescitations
- 2020Single-Source, Solvent-Free, Room Temperature Deposition of Black γ-CsSnI 3 Filmscitations
- 2020Origins of infrared transparency in highly conductive perovskite stannate BaSnO3citations
- 2020Single‐Source, Solvent‐Free, Room Temperature Deposition of Black γ‐CsSnI3 Filmscitations
- 2020Epitaxial growth of full range of compositions of (1 1 1) PbZr1- xTixO3 on GaNcitations
- 2017Tuning of large piezoelectric response in nanosheet-buffered lead zirconate titanate films on glass substratescitations
- 2017One step toward a new generation of C-MOS compatible oxide PN junctionscitations
- 2016Long-range domain structure and symmetry engineering by interfacial oxygen octahedral coupling at heterostructure interfacecitations
- 2016A flexoelectric microelectromechanical system on siliconcitations
- 2015Epitaxy on Demandcitations
- 2014Patterning of Epitaxial Perovskites from Micro and Nano Molded Stencil Maskscitations
- 2012High-Temperature Magnetic Insulating Phase in Ultrathin La0.67Sr0.33MnO3 Filmscitations
- 2011Metallic and Insulating Interfaces of Amorphous SrTiO3-Based Oxide Heterostructurescitations
- 2009Low-temperature solution synthesis of chemically functional ferromagnetic FePtAu nanoparticlescitations
- 2007Magnetic effects at the interface between non-magnetic oxidescitations
Places of action
| Organizations | Location | People |
|---|
article
One step toward a new generation of C-MOS compatible oxide PN junctions
Abstract
Heterostructures formed by La0.7Sr0.3MnO3/ZnO (LSMO/ZnO) interfaces exhibit extremely interesting electronic properties making them promising candidates for novel oxide pn junctions, with multifunctional features. In this work, the structure of the interface is studied through a combined experimental/theoretical approach. Heterostructures were grown epitaxially and homogeneously on 4″ silicon wafers, characterized by advanced electron microscopy imaging and spectroscopy and simulated by ab initio density functional theory calculations. The simulation results suggest that the most stable interface configuration is composed of the (001) face of LSMO, with the LaO planes exposed, in contact with the (112̅0) face of ZnO. The ab initio predictions agree well with experimental high-angle annular dark field scanning transmission electron microscopy images and confirm the validity of the suggested structural model. Electron energy loss spectroscopy confirms the atomic sharpness of the interface. From statistical parameter estimation theory, it has been found that the distances between the interfacial planes are displaced from the respective ones of the bulk material. This can be ascribed to the strain induced by the mismatch between the lattices of the two materials employed.