| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Chen, Gong
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2021Observation of Hydrogen-Induced Dzyaloshinskii-Moriya Interaction and Reversible Switching of Magnetic Chiralitycitations
- 2018Significant Dzyaloshinskii–Moriya interaction at graphene–ferromagnet interfaces due to the Rashba effectcitations
- 2017Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devicescitations
- 2017Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devicescitations
- 2017Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devicescitations
- 2017Crystalline MoOx Thin-Films as Hole Transport Layers in DBP/C70 Based Organic Solar Cell
- 2017Crystalline MoOx Thin-Films as Hole Transport Layers in DBP/C70 Based Organic Solar Cell
- 2016Anatomy and Giant Enhancement of the Perpendicular Magnetic Anisotropy of Cobalt−Graphene Heterostructurescitations
- 2016Unconventional magnetisation texture in graphene/cobalt hybridscitations
- 2015Room temperature skyrmion ground state stabilized through interlayer exchange couplingcitations
Places of action
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article
Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices
Abstract
The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We report on a work function increase of almost 2 eV after inducing in situ crystallization of the films at 500 °C, resulting in the formation of a single crystalline α-MoO3 overlaid by substoichiometric and highly disordered nanoaggregates. The surface nanoaggregates possess various electronic properties, such as a work function ranging from 5.5 eV up to 6.2 eV, as determined from low-energy electron microscopy studies. The crystalline underlayer possesses a work function greater than 6.3 eV, up to 6.9 eV, characteristic of a very clean and nearly defect-free MoO3. By combining electronic spectroscopies together with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers.