| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kolosov, Oleg Victor
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2023Determination of electric and thermoelectric properties of molecular junctions by AFM in peak force tapping modecitations
- 2022Low Thermal Conductivity in Franckeite Heterostructurescitations
- 2022Thermoelectric properties of organic thin films enhanced by π-π stackingcitations
- 2021Thermoelectric voltage modulation via backgate doping in graphene nanoconstrictions studied with STGM
- 2021SCANNING THERMAL MICROSCOPY OF 2D MATERIALS IN HIGH VACUUM ENVIRONMENT
- 2020Scale-Up of Room-Temperature Constructive Quantum Interference from Single Molecules to Self-Assembled Molecular-Electronic Filmscitations
- 2020Direct mapping of local Seebeck coefficient in 2D material nanostructures via scanning thermal gate microscopy
- 2019Visualisation of subsurface defects in van-der-Waals heterostructures via 3D SPM mapping
- 2018Geometrically Enhanced Thermoelectric Effects in Graphene Nanoconstrictionscitations
- 2018Mechanical Properties of Advanced Gas-Cooled Reactor Stainless Steel Cladding After Irradiationcitations
- 2017Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in aircitations
- 2017Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in air
- 2017Correlation of nano-scale electrical and topographical mapping of buried nanoscale semiconductor junctions
- 2017Imaging subsurface defects in WS2/WSe2 CVD flakes via Ultrasonic Force Microscopies
- 2017Subsurface imaging of stacking faults and dislocations in WS2 CVD grown flakes via Ultrasonic and Heterodyne Force Microscopy
- 2017Characterisation of local thermal properties in nanoscale structures by scanning thermal microscopy
- 2017Subsurface imaging of two-dimensional materials at the nanoscalecitations
- 2015Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depthscitations
- 2014Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxycitations
- 2014Nanomechanical morphology of amorphous, transition, and crystalline domains in phase change memory thin filmscitations
- 2014Nanothermal characterization of amorphous and crystalline phases in chalcogenide thin films with scanning thermal microscopycitations
- 2014How Deep Ultrasonic and Heterodyne Force Microscopies Can Look at the Nanostructure of 2D Materials?
- 2013Atomic force acoustic microscopy
- 2005Application specific integrated circuitry for controlling analysis of a fluid
- 2005Multiparameteric oil condition sensor based on the tuning fork technology for automotive applicationscitations
- 2004Application specific integrated circuitry for controlling analysis of a fluid
- 2003Local probing of thermal properties at submicron depths with megahertz photothermal vibrations.citations
- 2002Nanometer-scale mechanical imaging of aluminum damascene interconnect structures in a low-dielectric-constant polymer.citations
- 2000Nanoscale elastic imaging of aluminum/low-k dielectric interconnect structures
Places of action
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article
Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in air
Abstract
Silicon dioxide (SiO2) is the most widely used dielectric for electronic applications. It is usually produced by thermal oxidation of silicon or by using a wide range of vacuum-based techniques. By default, the growth of SiO2 by thermal oxidation of silicon, requires the use of Si substrates whereas the other deposition techniques either produce low quality or poor interface material and mostly require high deposition or annealing temperatures. Recent investigations therefore have focused on the development of alternative deposition paradigms based on solutions. Here, we report the deposition of SiO2 thin film dielectrics deposited by spray pyrolysis in air at moderate temperatures of 350 oC from pentane-2,4-dione solutions of SiCl4. SiO2 dielectrics were investigated by means of UV–Vis absorption spectroscopy, spectroscopic ellipsometry, XPS, XRD, UFM/AFM, admittance spectroscopy, and field-effect measurements. Data analysis reveals smooth (RRMS<1 nm) amorphous films with a dielectric constant of about 3.8, an optical band gap of ≈8.1 eV, leakage current densities in the order of ≈10-7 A/cm2 at 1 MV/cm and high dielectric strength in excess of 5 MV/cm. XPS measurements confirm the SiO2 stoichiometry and FTIR spectra reveal features related to SiO2 only. Thin film transistors implementing spray coated SiO2 gate dielectrics and C60 and pentacene semiconducting channels exhibit excellent transport characteristics i.e. negligible hysteresis, low leakage currents, high on/off current modulation ratio in the order of 106 and high carrier mobility.