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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Adamopoulos, George
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Solution-Processed Metal Oxide Gate Dielectrics and Their Implementations in Zinc Oxide Based Thin Film Transistors
- 2022Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °ccitations
- 2018Characterization of spray pyrolyzed Ga2O3 thin films for thin-film transistor device applications
- 2018(INVITED) Solution-processed metal oxide-based CMOS
- 2017Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in aircitations
- 2017Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in air
- 2017(INVITED) Solution processed metal oxide-based electronics for displays applications employing both inkjet and spray coating techniques
- 2016(INVITED) Solution Processed SiO2 and high-k Dielectrics for MO-based CMOS TFTs
- 2016(INVITED) Solution Processed High-k Dielectrics for Thin Film Transistors Employing Metal Oxide-based Semiconducting Channels
- 2014Solution processed aluminium titanate dielectrics for their applications in high mobility ZnO based thin film transistors
- 2014Structure and properties of solution processed hafnium oxide gate dielectrics for their applications in high mobility ZnO based thin film transistors
- 2013Be-doped ZnO thin-film transistors and circuits fabricated by spray pyrolysis in aircitations
- 2011Structural and Electrical Characterization of ZnO Films Grown by Spray Pyrolysis and Their Application in Thin-Film Transistorscitations
- 2005Optical and electronic properties of plasma-deposited hydrogenated amorphous carbon nitride and carbon oxide filmscitations
- 2004Hydrogen content estimation of hydrogenated amorphous carbon by visible Raman spectroscopycitations
- 2003The electrochemical reactivity of amorphous hydrogenated carbon nitrides for varying nitrogen contents: the role of the substratecitations
- 2000Determination of bonding in amorphous carbons by electron energy loss spectroscopy, Raman scattering and X-ray reflectivitycitations
Places of action
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article
Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in air
Abstract
Silicon dioxide (SiO2) is the most widely used dielectric for electronic applications. It is usually produced by thermal oxidation of silicon or by using a wide range of vacuum-based techniques. By default, the growth of SiO2 by thermal oxidation of silicon, requires the use of Si substrates whereas the other deposition techniques either produce low quality or poor interface material and mostly require high deposition or annealing temperatures. Recent investigations therefore have focused on the development of alternative deposition paradigms based on solutions. Here, we report the deposition of SiO2 thin film dielectrics deposited by spray pyrolysis in air at moderate temperatures of 350 oC from pentane-2,4-dione solutions of SiCl4. SiO2 dielectrics were investigated by means of UV–Vis absorption spectroscopy, spectroscopic ellipsometry, XPS, XRD, UFM/AFM, admittance spectroscopy, and field-effect measurements. Data analysis reveals smooth (RRMS<1 nm) amorphous films with a dielectric constant of about 3.8, an optical band gap of ≈8.1 eV, leakage current densities in the order of ≈10-7 A/cm2 at 1 MV/cm and high dielectric strength in excess of 5 MV/cm. XPS measurements confirm the SiO2 stoichiometry and FTIR spectra reveal features related to SiO2 only. Thin film transistors implementing spray coated SiO2 gate dielectrics and C60 and pentacene semiconducting channels exhibit excellent transport characteristics i.e. negligible hysteresis, low leakage currents, high on/off current modulation ratio in the order of 106 and high carrier mobility.