| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Salvalaglio, Marco
TU Dresden
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (31/31 displayed)
- 2022Controlling magnetic anisotropy in amplitude expansion of phase field crystal model
- 2021Scalable Disordered Hyperuniform Architectures via Nanoimprint Lithography of Metal Oxidescitations
- 2021Doubly degenerate diffuse interface models of anisotropic surface diffusioncitations
- 2021Doubly degenerate diffuse interface models of surface diffusioncitations
- 2020Hyperuniform monocrystalline structures by spinodal solid-state dewettingcitations
- 2020Self-assembly of nanovoids in Si microcrystals epitaxially grown on deeply patterned substratescitations
- 2020Hyperuniform Monocrystalline Structures by Spinodal Solid-State Dewettingcitations
- 2019CONVEXITY SPLITTING IN A PHASE FIELD MODEL FOR SURFACE DIFFUSION
- 2019Deterministic 3D self-assembly of Si through a rim-less and topology-preserving dewetting regime
- 2019Closing the gap between atomic-scale lattice deformations and continuum elasticitycitations
- 2019Deterministic three-dimensional self-assembly of Si through a rimless and topology-preserving dewetting regimecitations
- 2018Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instabilitycitations
- 2017Controlling the energy of defects and interfaces in the amplitude expansion of the phase-field crystal modelcitations
- 2017Strain Engineering in Highly Mismatched SiGe/Si Heterostructurescitations
- 2017Fully coherent Ge islands growth on Si nano-pillars by selective epitaxycitations
- 2017Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitecturescitations
- 2017Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended filmcitations
- 2017Strain engineering in highly mismatched SiGe/Si heterostructurescitations
- 2016Thin-film growth dynamics with shadowing effects by a phase-field approachcitations
- 2016Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substratescitations
- 2016Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substratescitations
- 2016Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystalscitations
- 2016Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillarscitations
- 2016Elastic and plastic stress relaxation in highly mismatched SiGe/Si crystalscitations
- 2016From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructurescitations
- 2016From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructurescitations
- 2015Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Sicitations
- 2015Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing
- 2015Faceting of equilibrium and metastable nanostructures: a Phase-Field model of surface diffusion tackling realistic shapescitations
- 2015Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars
- 2015Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Sicitations
Places of action
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article
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars
Abstract
In this work, we demonstrate the growth of Ge crystals and suspended continuous layers on Si(001) substrates deeply patterned in high aspect-ratio pillars. The material deposition was carried out in a commercial reduced-pressure chemical vapor deposition reactor, thus extending the "vertical-heteroepitaxy" technique developed by using the peculiar low-energy plasma-enhanced chemical vapor deposition reactor, to widely available epitaxial tools. The growth process was thoroughly analyzed, from the formation of small initial seeds to the final coalescence into a continuous suspended layer, by means of scanning and transmission electron microscopy, X-ray diffraction, and μ-Raman spectroscopy. The preoxidation of the Si pillar sidewalls and the addition of hydrochloric gas in the reactants proved to be key to achieve highly selective Ge growth on the pillars top only, which, in turn, is needed to promote the formation of a continuous Ge layer. Thanks to continuum growth models, we were able to single out the different roles played by thermodynamics and kinetics in the deposition dynamics. We believe that our findings will open the way to the low-cost realization of tens of micrometers thick heteroepitaxial layer (e.g., Ge, SiC, and GaAs) on Si having high crystal quality.