| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Reinert, Friedrich
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Chemical and Electronic Structure of the i‐ZnO/In$_x$S$_y$ :Na Front Contact Interface in Cu(In,Ga)(S,Se)$_2$ Thin‐Film Solar Cells
- 2023Unveiling the orbital texture of 1T-TiTe2 using intrinsic linear dichroism in multidimensional photoemission spectroscopy
- 2021Unveiling the orbital texture of 1T-TiTe2 using intrinsic linear dichroism in multidimensional photoemission spectroscopycitations
- 2021Unveiling the orbital texture of 1T-TiTe2 using intrinsic linear dichroism in multidimensional photoemission spectroscopycitations
- 2016Band-Gap Widening at the Cu(In,Ga)(S,Se)2 Surface:A Novel Determination Approach Using Reflection Electron Energy Loss Spectroscopycitations
- 2016Band-Gap Widening at the Cu(In,Ga)(S,Se)2 Surfacecitations
- 2016Spin-texture inversion in the giant Rashba semiconductor BiTeIcitations
- 2015Defect and structural imperfection effects on the electronic properties of BiTeI surfaces
- 2014Defect and structural imperfection effects on the electronic properties of BiTeI surfacescitations
- 2014A combined experimental and theoretical study of Rashba-split surface states on the ( √3x√3) Pb/Ag (111)R30° surfacecitations
- 2010Submonolayer growth of copper-phthalocyanine on Ag(111)citations
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article
Band-Gap Widening at the Cu(In,Ga)(S,Se)2 Surface
Abstract
<p>Using reflection electron energy loss spectroscopy (REELS), we have investigated the optical properties at the surface of a chalcopyrite-based Cu(In,Ga)(S,Se)<sub>2</sub> (CIGSSe) thin-film solar cell absorber, as well as an indium sulfide (In<sub>x</sub>S<sub>y</sub>) buffer layer before and after annealing. By fitting the characteristic inelastic scattering cross-section λK(E) to cross sections evaluated by the QUEELS-(k,ω)-REELS software package, we determine the surface dielectric function and optical properties of these samples. A comparison of the optical values at the surface of the In<sub>x</sub>S<sub>y</sub> film with bulk ellipsometry measurements indicates a good agreement between bulk- and surface-related optical properties. In contrast, the properties of the CIGSSe surface differ significantly from the bulk. In particular, a larger (surface) band gap than for bulk-sensitive measurements is observed, providing a complementary and independent confirmation of earlier photoelectron spectroscopy results. Finally, we derive the inelastic mean free path λ for electrons in In<sub>x</sub>S<sub>y</sub>, annealed In<sub>x</sub>S<sub>y</sub>, and CIGSSe at a kinetic energy of 1000 eV.</p>