| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Branquinho, Rita
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2022Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductorscitations
- 2022Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductorscitations
- 2022A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applicationscitations
- 2022A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applicationscitations
- 2020Application of ultrasonic sprayed zirconium oxide dielectric in zinc tin oxide-based thin film transistorcitations
- 2020Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectriccitations
- 2020Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectriccitations
- 2020Solution combustion synthesis of transparent conducting thin films for sustainable photovoltaic applicationscitations
- 2020Solution combustion synthesis of transparent conducting thin films for sustainable photovoltaic applicationscitations
- 2020Piezoelectricity Enhancement of Nanogenerators Based on PDMS and ZnSnO3 Nanowires through Microstructurationcitations
- 2019Tailoring IGZO composition for enhanced fully solution-based thin film transistorscitations
- 2018Boosting highly transparent and conducting indium zinc oxide thin films through solution combustion synthesis: Influence of rapid thermal annealingcitations
- 2016UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistorscitations
- 2016FUV-assisted low temperature AlOx solution based dielectric for oxide TFTs
- 2015Gravure printed sol-gel derived AlOOH hybrid nanocomposite thin films for printed electronicscitations
- 2015Gravure printed sol-gel derived AlOOH hybrid nanocomposite thin films for printed electronicscitations
- 2015Morphological and optical characterization of transparent thin films obtained at low temperature using ZnO nanoparticles
- 2015A combination of solution synthesis solution combustion synthesis for highly conducting and transparent Aluminum Zinc Oxide thin filmscitations
- 2014Aqueous Combustion Synthesis of Aluminum Oxide Thin Films and Application as Gate Dielectric in GZTO Solution-based TFTscitations
- 2013Preparation and characterization of cellulose nanocomposite hydrogels as functional electrolytescitations
- 2008Adsorption and catalytic properties of SiO2/Bi2S3 nanocomposites on the methylene blue photodecolorization processcitations
Places of action
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article
UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors
Abstract
<p>Solution processing of amorphous metal oxides has lately been used as an option to implement in flexible electronics, allowing a reduction of the associated costs and high performance. However, the research has focused more on the semiconductor layer rather than on the insulator layer, which is related to the stability and performance of the devices. This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far-ultraviolet (FUV) irradiation on the properties of the insulator on thin-film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates. An optimized dielectric layer was obtained for an annealing of 30 min assisted by FUV exposure. These thin films were applied in gallium-indium-zinc oxide TFTs as dielectrics showing the best results for TFTs annealed at 180 °C with FUV irradiation: good reproducibility with a subthreshold slope of 0.11 ± 0.01 V dec <sup>-1</sup> and a turn-on voltage of -0.12 ± 0.05 V, low operating voltage, and good stability over time. Finally, the dielectric layer was applied in solution-processed indium oxide (In<sub>2</sub>O<sub>3</sub>) TFTs at low temperature, 180 °C, with a short processing time being compatible with flexible electronic applications.</p>