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Xenogiannopoulou, Evangelia
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article
Epitaxial 2D MoSe2 (HfSe2) Semiconductor/2D TaSe2 Metal van der Waals Heterostructures
Abstract
<p>Molecular beam epitaxy of 2D metal TaSe<sub>2</sub>/2D MoSe<sub>2</sub> (HfSe<sub>2</sub>) semiconductor heterostructures on epi-AlN(0001)/Si(111) substrates is reported. Electron diffraction reveals an in-plane orientation indicative of van der Waals epitaxy, whereas electronic band imaging supported by first-principles calculations and X-ray photoelectron spectroscopy indicate the presence of a dominant trigonal prismatic 2H-TaSe<sub>2</sub> phase and a minor contribution from octahedrally coordinated TaSe<sub>2</sub>, which is present in TaSe<sub>2</sub>/AlN and TaSe<sub>2</sub>/HfSe<sub>2</sub>/AlN but notably absent in the TaSe<sub>2</sub>/MoSe<sub>2</sub>/AlN, indicating superior structural quality of TaSe<sub>2</sub> grown on MoSe<sub>2</sub>. Apart from its structural and chemical compatibility with the selenide semiconductors, TaSe<sub>2</sub> has a workfunction of 5.5 eV as measured by ultraviolet photoelectron spectroscopy, which matches very well with the semiconductor workfunctions, implying that epi-TaSe<sub>2</sub> can be used for low-resistivity contacts to MoSe<sub>2</sub> and HfSe<sub>2</sub>.</p>