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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Backofen, Rainer
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2022Controlling magnetic anisotropy in amplitude expansion of phase field crystal model
- 2019CONVEXITY SPLITTING IN A PHASE FIELD MODEL FOR SURFACE DIFFUSION
- 2017Controlling the energy of defects and interfaces in the amplitude expansion of the phase-field crystal modelcitations
- 2017Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitecturescitations
- 2017Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended filmcitations
- 2016Thin-film growth dynamics with shadowing effects by a phase-field approachcitations
- 2015Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Sicitations
- 2015Faceting of equilibrium and metastable nanostructures: a Phase-Field model of surface diffusion tackling realistic shapescitations
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article
Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Si
Abstract
The move from dimensional to functional scaling in microelectronics has led to renewed interest toward integration of Ge on Si. In this work, simulation-driven experiments leading to high-quality suspended Ge films on Si pillars are reported. Starting from an array of micrometric Ge crystals, the film is obtained by exploiting their temperature-driven coalescence across nanometric gaps. The merging process is simulated by means of a suitable surface-diffusion model within a phase-field approach. The successful comparison between experimental and simulated data demonstrates that the morphological evolution is driven purely by the lowering of surface-curvature gradients. This allows for fine control over the final morphology to be attained. At fixed annealing time and temperature, perfectly merged films are obtained from Ge crystals grown at low temperature (450 degrees C), whereas some void regions still persist for crystals grown at higher temperature (500 degrees C) due to their different initial morphology. The latter condition, however, looks very promising for possible applications. Indeed, scanning tunneling electron microscopy and high-resolution transmission electron microscopy analyses show that, at least during the first stages of merging, the developing film is free from threading dislocations. The present findings, thus, introduce a promising path to integrate Ge layers on Si with a low dislocation density.