| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Miglio, Leo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 20242H-Si/Ge for Group-IV Photonics:on the Origin of Extended Defects in Core-Shell Nanowirescitations
- 20242H–Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core–Shell Nanowirescitations
- 2021Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulationscitations
- 2021Unveiling Planar Defects in Hexagonal Group IV Materials
- 2021Unveiling Planar Defects in Hexagonal Group IV Materialscitations
- 2020In-plane selective area InSb–Al nanowire quantum networkscitations
- 2020In-plane selective area InSb–Al nanowire quantum networkscitations
- 2020Self-assembly of nanovoids in Si microcrystals epitaxially grown on deeply patterned substratescitations
- 2020Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentialscitations
- 2019X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) waferscitations
- 2019Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulationscitations
- 2018Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowirescitations
- 2017Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended filmcitations
- 2016Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substratescitations
- 2015Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Sicitations
- 2013Direct measurement of coherency limits for strain relaxation in heteroepitaxial core/shell nanowirescitations
Places of action
| Organizations | Location | People |
|---|
article
Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Si
Abstract
The move from dimensional to functional scaling in microelectronics has led to renewed interest toward integration of Ge on Si. In this work, simulation-driven experiments leading to high-quality suspended Ge films on Si pillars are reported. Starting from an array of micrometric Ge crystals, the film is obtained by exploiting their temperature-driven coalescence across nanometric gaps. The merging process is simulated by means of a suitable surface-diffusion model within a phase-field approach. The successful comparison between experimental and simulated data demonstrates that the morphological evolution is driven purely by the lowering of surface-curvature gradients. This allows for fine control over the final morphology to be attained. At fixed annealing time and temperature, perfectly merged films are obtained from Ge crystals grown at low temperature (450 degrees C), whereas some void regions still persist for crystals grown at higher temperature (500 degrees C) due to their different initial morphology. The latter condition, however, looks very promising for possible applications. Indeed, scanning tunneling electron microscopy and high-resolution transmission electron microscopy analyses show that, at least during the first stages of merging, the developing film is free from threading dislocations. The present findings, thus, introduce a promising path to integrate Ge layers on Si with a low dislocation density.