| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Grochowska, Katarzyna
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2022Temperature-controlled nanomosaics of AuCu bimetallic structure towards smart light managementcitations
- 2022The Anodization of Thin Titania Layers as a Facile Process towards Semitransparent and Ordered Electrode Materialcitations
- 2021Spin crossover and cooperativity in nanocrystalline [Fe(pyrazine)Pt(CN)4] thin films deposited by matrix-assisted laser evaporationcitations
- 2020The pulsed laser ablation synthesis of colloidal iron oxide nanoparticles for the enhancement of TiO<inf>2</inf> nanotubes photo-activitycitations
- 2020Spectacular Oxygen Evolution Reaction Enhancement through Laser Processing of the Nickel-Decorated Titania Nanotubescitations
- 2015Interfacial properties of organic semiconductor-inorganic magnetic oxide hybrid spintronic systems fabricated using pulsed laser depositioncitations
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article
Interfacial properties of organic semiconductor-inorganic magnetic oxide hybrid spintronic systems fabricated using pulsed laser deposition
Abstract
We report fabrication of a hybrid organicsemiconductor-inorganic complex oxide interface ofrubrene and La0.67Sr0.33MnO3 (LSMO) for spintronicdevices using pulsed laser deposition (PLD) andinvestigate the interface structure and chemicalbonding-dependent magnetic properties. Our resultsdemonstrate that with proper control of growthparameters, thin films of organic semiconductor rubrenecan be deposited without any damage to the molecularstructure. Rubrene, a widely used organic semiconductorwith high charge-carrier mobility and spin diffusionlength, when grown as thin films on amorphous andcrystalline substrates such as SiO2-glass, indium-tinoxide (ITO), and LSMO by PLD at room temperature and alaser fluence of 0.19 J/cm2, reveals amorphous structure.The Raman spectra verify the signatures of both Ag and BgRaman active modes of rubrene molecules. X-rayreflectivity measurements indicate a well-definedinterface formation between surface-treated LSMO andrubrene, whereas X-ray photoelectron spectra indicate thesignature of hybridization of the electronic states atthis interface. Magnetic measurements show that theferromagnetic property of the rubrene-LSMO interfaceimproves by >230% compared to the pristine LSMO surfacedue to this proposed hybridization. Intentionaldisruption of the direct contact between LSMO and rubreneby insertion of a dielectric AlOx layer results in anobservably decreased ferromagnetism. These experimentalresults demonstrate that by controlling the interfaceformation between organic semiconductor and half-metallicoxide thin films, it is possible to engineer theinterface spin polarization properties. Results alsoconfirm that by using PLD for consecutive growth ofdifferent layers, contamination-free interfaces can beobtained, and this finding is significant for thewell-controlled and reproducible design of spin-polarizedinterfaces for future hybrid spintronics devices.