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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Apergi, Sofia
Institut National des Sciences Appliquées de Rennes
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2024Probing the Reactivity of ZnO with Perovskite Precursorscitations
- 2023Calculating the Circular Dichroism of Chiral Halide Perovskites:A Tight-Binding Approachcitations
- 2023Calculating the Circular Dichroism of Chiral Halide Perovskitescitations
- 2022Decomposition of Organic Perovskite Precursors on MoO 3 :Role of Halogen and Surface Defectscitations
- 2022Decomposition of Organic Perovskite Precursors on MoO3citations
- 2021Efficient Computation of Structural and Electronic Properties of Halide Perovskites Using Density Functional Tight Bindingcitations
- 2021Efficient Computation of Structural and Electronic Properties of Halide Perovskites Using Density Functional Tight Binding:GFN1-xTB Methodcitations
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article
Probing the Reactivity of ZnO with Perovskite Precursors
Abstract
To achieve more stable and efficient metal halide perovskite devices, optimization of charge transport materials and their interfaces with perovskites is crucial. ZnO on paper would make an ideal electron transport layer in perovskite devices. This metal oxide has a large bandgap, making it transparent to visible light; it can be easily n-type doped, has a decent electron mobility, and is thought to be chemically relatively inert. However, in combination with perovskites, ZnO has turned out to be a source of instability, rapidly degrading the performance of devices. In this work, we provide a comprehensive experimental and computational study of the interaction between the most common organic perovskite precursors and the surface of ZnO, with the aim of understanding the observed instability. Using X-ray photoelectron spectroscopy, we find a complete degradation of the precursors in contact with ZnO and the formation of volatile species as well as new surface bonds. Our computational work reveals that different pristine and defected surface terminations of ZnO facilitate the decomposition of the perovskite precursor molecules, mainly through deprotonation, making the deposition of the latter on those surfaces impossible without the use of passivation. ; To achieve more stable and efficient metal halide perovskite devices, optimization of charge transport materials and their interfaces with perovskites is crucial. ZnO on paper would make an ideal electron transport layer in perovskite devices. This metal oxide has a large bandgap, making it transparent to visible light; it can be easily n-type doped, has a decent electron mobility, and is thought to be chemically relatively inert. However, in combination with perovskites, ZnO has turned out to be a source of instability, rapidly degrading the performance of devices. In this work, we provide a comprehensive experimental and computational study of the interaction between the most common organic perovskite precursors and the surface of ZnO, with the aim of ...