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Grießer, Thomas
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- 2023Solution-Processable Cu3BiS3 Thin Films: Growth Process Insights and Increased Charge Generation Properties by Interface Modificationcitations
- 2019UV-Induced reduction of graphene oxide in cellulose nanofibril compositescitations
- 2018Characterization of Surface and Structure of In Situ Doped Sol-Gel-Derived Silicon Carbidecitations
- 2017Simple method for the quantitative analysis of thin copolymer films on substrates by infrared spectroscopy using direct calibrationcitations
- 2014Photoregeneration of Trimethylsilyl Cellulose as a Tool for Microstructuring Ultrathin Cellulose Supportscitations
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article
Solution-Processable Cu3BiS3 Thin Films: Growth Process Insights and Increased Charge Generation Properties by Interface Modification
Abstract
Cu3BiS3 thin films are fabricated via spin coating of precursor solutions containing copper and bismuth xanthates onto planar glass substrates or mesoporous metal oxide scaffolds followed by annealing at 300 °C to convert the metal xanthates into copper bismuth sulfide. Detailed insights into the film formation are gained from time-resolved simultaneous small and wide angle X-ray scattering measurements. The Cu3BiS3 films show a high absorption coefficient and a band gap of 1.55 eV, which makes them attractive for application in photovoltaic devices. Transient absorption spectroscopic measurements reveal that charge generation yields in mesoporous TiO2/Cu3BiS3 heterojunctions can be significantly improved by the introduction of an In2S3 interlayer, and long-lived charge carriers (t50% of 10 μs) are found.