| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Anadón, Alberto
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2023Spin-to-charge conversion by spin pumping in sputtered polycrystalline Bi x Se 1 − xcitations
- 2023Spin transport properties of spinel vanadate-based heterostructurescitations
- 2023Testing the topological insulator behavior of half-Heusler PdYBi and PtYBi (111) epitaxial thin filmscitations
- 2023Toward Nonvolatile Spin-Orbit Devicescitations
- 2022Spin-to-charge conversion by spin pumping in sputtered polycrystalline Bi$_x$Se$_{1-x}$
- 2022Thermal Spin-Current Generation in the Multifunctional Ferrimagnet Ga 0.6 Fe 1.4 O 3citations
- 2021Engineering the spin conversion in graphene monolayer epitaxial structurescitations
- 2021Large Perpendicular Magnetic Anisotropy in Nanometer-Thick Epitaxial Graphene/Co/Heavy Metal Heterostructures for Spin-Orbitronics Devicescitations
- 2021Large perpendicular magnetic anisotropy in nanometer-thick epitaxial graphene/Co/heavy metal heterostructures for spin–orbitronics devicescitations
- 2017Spin Seebeck effect in Y-type hexagonal ferrite thin filmscitations
Places of action
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article
Toward Nonvolatile Spin-Orbit Devices
Abstract
<p>While technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tunable, nonvolatile memories through control of the interfacial spin-orbit driven interaction occurring at graphene/Co interfaces deposited on heavy metal supports. Here, the integration of ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> on graphene/Co/heavy metal epitaxial stacks is investigated via the implementation of several nucleation methods in atomic layer deposition. By employing in situ Al<sub>2</sub>O<sub>3</sub> as a nucleation layer sandwiched between Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> and graphene, the Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> demonstrates a remanent polarization (2Pr) of 19.2 μC/cm<sup>2</sup>. Using an ex situ, naturally oxidized sputtered Ta layer for nucleation, we could control 2Pr via the interlayer thickness, reaching maximum values of 28 μC/cm<sup>2</sup> with low coercive fields. Magnetic hysteresis measurements taken before and after atomic layer deposition show strong perpendicular magnetic anisotropy, with minimal deviations in the magnetization reversal pathways due to the Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> deposition process, thus pointing to a good preservation of the magnetic stack including single-layer graphene. X-ray diffraction measurements further confirm that the high-quality interfaces demonstrated in the stack remain unperturbed by the ferroelectric deposition and anneal. The proposed graphene-based ferroelectric/magnetic structures offer the strong advantages of ferroelectricity and ferromagnetism at room temperature, enabling the development of novel magneto-electric and nonvolatile in-memory spin-orbit logic architectures with low power switching.</p>