| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Baron, Thierry
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Study of In0,53Ga0,47As/ InP/InAlAs/InP heterostructures by TOF-SIMS and HAXPES
- 2022Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitorscitations
- 2022Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitorscitations
- 2022200 mm-scale growth of 2D layered GaSe with preferential orientationcitations
- 2021Gallium Selenide Nanoribbons on Silicon Substrates for Photodetectioncitations
- 2020Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasingcitations
- 2018Electrical properties of metal/Al 2 O 3 /In 0.53 Ga 0.47 As capacitors grown on InPcitations
- 2018Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In 0.53 Ga 0.47 As templatecitations
- 2018Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniquescitations
- 2016Toward the III-V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)citations
- 2014Hybrid nanocomposites based on conducting polymer and silicon nanowires for photovoltaic applicationcitations
- 2011Hidden defects in silicon nanowirescitations
- 2009Self-assembling study of a cylinder-forming block copolymer via a nucleation-growth mechanismcitations
- 2009Emerging Nanotechnology for integration of Nanostructures in Nanoelectronic devicescitations
- 2008Control of gold surface diffusion on Si nanowirescitations
- 2007MOCVD of BiFeO3 thin films on SrTiO3citations
Places of action
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article
Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing
Abstract
International audience ; In recent years, plasma enhanced atomic layer deposition (PEALD) has emerged as a key method for the growth of conformal and homogeneous aluminum nitride (AlN) films at the nanoscale. In this work, the utilized PEALD reactor was equipped not only with a traditional remote Inductively Coupled Plasma source but also with an innovative additional power supply connected to the substrate holder. Thus, we investigate here the substrate biasing effect on AlN film quality deposited on (100) silicon. We report that by adjusting the ion energy via substrate biasing, the AlN film quality can be significantly improved. Indeed, compared to films commonly deposited without bias, AlN deposited with a platen power of 5 W displays a 14% increase in the number of N−Al bonds according to X-ray spectroscopy analysis. Moreover, after having integrated them into Metal−AlN−Si capacitors, the 5 W AlN film exhibits a permittivity increase from 4.5 to 7.0 along with a drastic drop of leakage current density of more than 5 orders of magnitude. The use of substrate biasing during PEALD is thereby a promising strategy for the improvement of AlN film quality.