| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vines, Lasse
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2023Optical properties of ZnFe2O4 nanoparticles and Fe-decorated inversion domain boundaries in ZnO ; ENEngelskEnglishOptical properties of ZnFe2O4 nanoparticles and Fe-decorated inversion domain boundaries in ZnOcitations
- 2023The Role of Boron in Low Copper Spheroidal Graphite Ironscitations
- 2023The Role of Boron in Low Copper Spheroidal Graphite Irons ; ENEngelskEnglishThe Role of Boron in Low Copper Spheroidal Graphite Ironscitations
- 2023Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC ; ENEngelskEnglishStability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiCcitations
- 2023Thermal Stability of Schottky Contacts and Rearrangement of Defects in β-Ga2O3 Crystals ; ENEngelskEnglishThermal Stability of Schottky Contacts and Rearrangement of Defects in β-Ga2O3 Crystalscitations
- 2023Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy ; ENEngelskEnglishDefect level in κ-Ga2O3 revealed by thermal admittance spectroscopycitations
- 2023Migration of Ga vacancies and interstitials in β-Ga2 O3 ; ENEngelskEnglishMigration of Ga vacancies and interstitials in β-Ga2 O3citations
- 2022Fermi level controlled point defect balance in ion irradiated indium oxidecitations
- 2022On the permittivity of titanium dioxidecitations
- 2021Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modificationcitations
- 2021Manipulating Single-Photon Emission from Point Defects in Diamond and Silicon Carbidecitations
- 2021Dominant hydrogen complex in natural anatase TiO2citations
- 2020Monolithic thin-film chalcogenide–silicon tandem solar cells enabled by a diffusion barriercitations
- 2020Persistent Double-Layer Formation in Kesterite Solar Cells: A Critical Reviewcitations
- 2020Persistent Double-Layer Formation in Kesterite Solar Cells: A Critical Reviewcitations
- 2020Dynamic Impurity Redistributions in Kesterite Absorberscitations
- 2020Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticlescitations
- 2019Effects of Substrate and Post-Deposition Annealing on Structural and Optical Properties of (ZnO)1-x(GaN)x Filmscitations
- 2019Nanoscale n(++)-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopycitations
- 2019Influence of Oxygen Pressure on Growth of Si-Doped beta-(AlxGa1-x)(2)O-3 Thin Films on c-Sapphire Substrates by Pulsed Laser Depositioncitations
- 2019Role of Nitrogen in Defect Evolution in Zinc Oxide: STEM−EELS Nanoscale Investigationscitations
- 2018Direct observation of conduction band plasmons and the related Burstein-Moss shift in highly doped semiconductors: A STEM-EELS study of Ga-doped ZnO ; ENEngelskEnglishDirect observation of conduction band plasmons and the related Burstein-Moss shift in highly doped semiconductors: A STEM-EELS study of Ga-doped ZnOcitations
- 2016Ultra-doped n-type germanium thin films for sensing in the mid-infraredcitations
- 2016Enhancement of carrier mobility in thin Ge layer by Sn co-dopingcitations
Places of action
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article
Persistent Double-Layer Formation in Kesterite Solar Cells: A Critical Review
Abstract
In kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cell research, an asymmetric crystallization profile is often obtained after annealing, resulting in a bilayered - or double-layered - CZTSSe absorber. So far, only segregated pieces of research exist to characterize the appearance of this double layer, its formation dynamics, and its effect on the performances of devices. In this work, we review the existing research on double-layered kesterites and evaluate the different mechanisms proposed. Using a cosputtering-based approach, we show that the two layers can differ significantly in morphology, composition, and optoelectronic properties and complement the results with a large statistical data set of over 850 individual CZTS solar cells. By reducing the absorber thickness from above 1000 to 300 nm, we show that the double-layer segregation is alleviated. In turn, we see a progressive improvement in the device performance for lower thickness, which alone would be inconsistent with the well-known case of ultrathin CIGS solar cells. We therefore attribute the improvements to the reduced double-layer occurrence and find that the double layer limits the efficiency of our devices to below 7%. By comparing the results with CZTS grown on monocrystalline Si substrates, without a native Na supply, we show that the alkali metal supply does not determine the double-layer formation but merely reduces the threshold for its occurrence. Instead, we propose that the main formation mechanism is the early migration of Cu to the surface during annealing and formation of Cu2-xS phases in a self-regulating process akin to the Kirkendall effect. Finally, we comment on the generality of the mechanism proposed by comparing our results to other synthesis routes, including our own in-house results from solution processing and pulsed laser deposition of sulfide- and oxide-based targets. We find that although the double-layer occurrence largely depends on the kesterite synthesis route, the common factors determining the double-layer occurrence appear to be the presence of metallic Cu and/or a chalcogen deficiency in the precursor matrix. We suggest that understanding the limitations imposed by the double-layer dynamics could prove useful to pave the way for breaking the 13% efficiency barrier for this technology.