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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Płocharski, Janusz
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2020Substrate-Induced Variances in Morphological and Structural Properties of MoS<inf>2</inf> Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO<inf>2</inf>citations
- 2012ER suspensions of composite core-shell microspheres with improved sedimentation stabilitycitations
- 2009Ionically conductive polymers for ER fluid preparation
- 2009Electrorheological fluids containing phosphorylated polystyrene-co-divinylbenzenecitations
- 2006Electrorheological effect in hybrid fluids with liquid crystalline additivescitations
- 2005Electrorheological fluids based on polymer electrolytescitations
- 2005Electrorheological fluids based on modified polyacrylonitrilecitations
- 2005Study of electrorheological properties of poly (p -phenylene) dispersionscitations
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article
Substrate-Induced Variances in Morphological and Structural Properties of MoS<inf>2</inf> Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO<inf>2</inf>
Abstract
<p>In this work, we report the impact of substrate type on the morphological and structural properties of molybdenum disulfide (MoS2) grown by chemical vapor deposition (CVD). MoS2 synthesized on a three-dimensional (3D) substrate, that is, SiO2, in response to the change of the thermodynamic conditions yielded different grain morphologies, including triangles, truncated triangles, and circles. Simultaneously, MoS2 on graphene is highly immune to the modifications of the growth conditions, forming triangular crystals only. We explain the differences between MoS2 on SiO2 and graphene by the different surface diffusion mechanisms, namely, hopping and gas-molecule-collision-like mechanisms, respectively. As a result, we observe the formation of thermodynamically favorable nuclei shapes on graphene, while on SiO2, a full spectrum of domain shapes can be achieved. Additionally, graphene withstands the growth process well, with only slight changes in strain and doping. Furthermore, by the application of graphene as a growth substrate, we realize van der Waals epitaxy and achieve strain-free growth, as suggested by the photoluminescence (PL) studies. We indicate that PL, contrary to Raman spectroscopy, enables us to arbitrarily determine the strain levels in MoS2.</p>