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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bassani, Franck
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Study of In0,53Ga0,47As/ InP/InAlAs/InP heterostructures by TOF-SIMS and HAXPES
- 2024Plasma-enhanced atomic layer deposition of silicon nitride thin films with different substrate biasing using Diiodosilane precursorcitations
- 2023Synthesis of AlOxNy thin films using a two-step PE-ALD processcitations
- 2022Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitorscitations
- 2022Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitorscitations
- 2022200 mm-scale growth of 2D layered GaSe with preferential orientationcitations
- 2022AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowthcitations
- 2020Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasingcitations
- 2020Morphology Transition of ZnO from Thin Film to Nanowires on Silicon and its Correlated Enhanced Zinc Polarity Uniformity and Piezoelectric Responsescitations
- 2020Impact of droplet composition on the nucleation rate and morphology of vapor-liquid-solid GeSn nanowirescitations
- 2018Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In 0.53 Ga 0.47 As templatecitations
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article
Morphology Transition of ZnO from Thin Film to Nanowires on Silicon and its Correlated Enhanced Zinc Polarity Uniformity and Piezoelectric Responses
Abstract
ZnO thin films and nanostructures have received over the last decade an increasing interest in the field of piezoelectricity, but their formation mechanisms on silicon when using pulsed-liquid injection metalorganic chemical vapor deposition (PLI-MOCVD) are still open to a large extent. Also, the effects of their morphology, dimensions, polarity and electrical properties on their piezoelectric properties have