| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tukiainen, Antti
Tampere University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Bridging the gap between surface physics and photonicscitations
- 2024Ti3+ Self-Doping-Mediated Optimization of TiO2 Photocatalyst Coating Grown by Atomic Layer Depositioncitations
- 2022Insights into Tailoring of Atomic Layer Deposition Grown TiO2 as Photoelectrode Coating
- 2022Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2022Low-Temperature Route to Direct Amorphous to Rutile Crystallization of TiO2Thin Films Grown by Atomic Layer Depositioncitations
- 2022Tunable Ti3+-Mediated Charge Carrier Dynamics of Atomic Layer Deposition-Grown Amorphous TiO2citations
- 2021Comparison of the heat-treatment effect on carrier dynamics in TiO2 thin films deposited by different methodscitations
- 2021Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2021Interface Engineering of TiO2 Photoelectrode Coatings Grown by Atomic Layer Deposition on Siliconcitations
- 2020Optimization of photogenerated charge carrier lifetimes in ald grown tio2 for photonic applicationscitations
- 2019Thermophotonic cooling in GaAs based light emitterscitations
- 2019Highly efficient charge separation in model Z-scheme TiO2/TiSi2/Si photoanode by micropatterned titanium silicide interlayercitations
- 2019Observation of local electroluminescent cooling and identifying the remaining challenges
- 2018Surface doping of GaxIn1−xAs semiconductor crystals with magnesiumcitations
- 2017Structured metal/polymer back reflectors for III-V solar cells
- 2016High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD techniquecitations
- 2016Determination of composition and energy gaps of GaInNAsSb layers grown by MBEcitations
- 2016Optical Energy Transfer and Loss Mechanisms in Coupled Intracavity Light Emitterscitations
- 2016Combined MBE-MOCVD process for high-efficiency multijunction solar cells
- 2016High efficiency multijunction solar cells: Electrical and optical properties of the dilute nitride sub-junctions
- 2015Defects in dilute nitride solar cells
- 2015Dilute nitrides for boosting the efficiency of III-V multijunction solar cells
- 2004Effects of rapid thermal annealing on deep levels in n -GaInPcitations
Places of action
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article
Ti3+ Self-Doping-Mediated Optimization of TiO2 Photocatalyst Coating Grown by Atomic Layer Deposition
Abstract
Titanium dioxide (TiO2) thin films are being applied in various photonic applications where precise controlling of thin film morphology and crystal structure are required for optimum performance. Here, photocatalytic TiO2 thin films were fabricated by atomic layer deposition (ALD) using TDMAT and H2O precursors utilizing growth temperature (150–225 °C) controlled self-doping with Ti3+. The performance was optimized in terms of post-deposition annealing (PDA) temperature (<500 °C) and film thickness (20–50 nm) towards photoelectrochemical water oxidation in 1 M NaOH under 1 Sun illumination. During the PDA, low ALD growth temperatures (150 °C and 175 °C) result in abrupt crystallization to anatase, whereas films grown at higher temperatures (200 °C and 225 °C) crystallize gradually to rutile. Unlike crystalline TiO2, as-deposited Ti3+ self-doped TiO2 films are amorphous and have low stability in 1 M NaOH. The best activity for water oxidation under 1 Sun is obtained for the 30 nm post-annealed rutile TiO2 film with a maximum photocurrent of 0.3 mA/cm2. This benchmark performance can be attributed to the optimum TiO2 absorption with respect to carrier diffusion length and more efficient solar light absorption of rutile TiO2 compared to anatase TiO2. These results demonstrate a simple strategy to fabricate either anatase or rutile TiO2 thin films by controlling the ALD growth temperature. ; Peer reviewed