| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Giannazzo, Filippo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023On the Possibility of Realizing a 2D Structure of Si-N Bonds by Metal-Organic Chemical Vapor Deposition
- 20232D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interfacecitations
- 20232D graphitic-like gallium nitride and other structural selectivity in confinement at graphene/SiC interfacecitations
- 2021MOCVD of AlN on epitaxial graphene at extreme temperaturescitations
- 2021Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Depositioncitations
- 2021Epitaxial Graphene on 4H-SiC (0001) as a Versatile Platform for Materials Growth : Mini-Reviewcitations
- 2021Indium Nitride at the 2D Limitcitations
- 2020Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interfacecitations
- 2019Nano-structured TiO2 grown by low-temperature reactive sputtering for planar perovskite solar cellscitations
- 2018Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaNcitations
- 2017Ambipolar MoS2Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalizationcitations
- 2013Electrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiCcitations
- 2011Nanoscale characterization of electrical transport at metal/3C-SiC interfaces
- 2010Nanoscale characterization of electrical transport at metal/3C-SiC interfacescitations
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article
Nano-structured TiO2 grown by low-temperature reactive sputtering for planar perovskite solar cells
Abstract
Low-temperature nanostructured electron-transporting layers (ETLs) for perovskite solar cells are grown by reactive sputtering at 160 °C with thickness in the range 22–76 nm and further stabilization in air at 180 °C to improve the lattice structure and to consequently reduce charge recombination during solar cell operation. In addition, the post-deposition treatment aims at leveling differences among samples to ensure material reproducibility. Nanostructured TiO2 has a further added value in promoting the structural coupling with the perovskite layer and establishing conformal interfaces in favor of the charge extraction from the active material. Nanostructuring of the ETLs also allows the shaping of the band gap width and position with a beneficial impact on the electrical parameters, as tested in standard architecture containing methylammonium lead iodide perovskites. A balance among parameters is achieved using a 40-nm-thick TiO2 ETL with a maximum efficiency of ∼15% reached without surface treatments or additional layers. The proposed growth methodology would be compatible with the use of flexible substrates after appropriated ETL structural adaptation. It can be likewise applied in perovskite/silicon-heterojunction tandem solar cells to fulfill the industrial demand for clean, solvent-free, reproducible, reliable, and high-throughput processes.