• Huisman, Bas A. H.
• Sebastia-Luna, Paz
• Pokharel, Unnati
• Bolink, Henk J.
• Koster, Lja
• Palazon, Francisco

Abstract

Most current thermoelectric materials have important drawbacks, such as toxicity, scarceness, and peak operating temperatures above 300 °C. Herein, we report the thermoelectric properties of different crystalline phases of Sn-based perovskite thin films. The 2D phase, Cs 2 SnI 4 , is obtained through vacuum thermal deposition and easily converted into the black β phase of CsSnI 3 (B-β CsSnI 3 ) by annealing at 150 °C. B-β CsSnI 3 is a p-type semiconductor with a figure of merit (ZT) ranging from 0.021 to 0.033 for temperatures below 100 °C, which makes it a promising candidate to power small electronic devices such as wearable sensors which may be interconnected in the so-called Internet of Things. The B-β phase is stable in nitrogen, whereas it spontaneously oxidizes to Cs 2 SnI 6 upon exposure to air. Cs 2 SnI 6 shows a negative Seebeck coefficient and an ultralow thermal conductivity. However, the ZT values are 1 order of magnitude lower than for B-β CsSnI 3 due to a considerably lower electrical conductivity.

Topics

• Deposition
• perovskite
• impedance spectroscopy
• thin film
• crystalline phase
• Nitrogen
• annealing
• toxicity
• tin
• thermal conductivity
• electrical conductivity
• p-type semiconductor