| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Renault, Olivier
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2023NanoESCA in all its states: From 2D materials band structure imaging to chemical mapping of biological tissues
- 2023The importance of sample preparation in time-of-flight secondary ion mass spectrometry analysis for semiconductor applications
- 2023Correlative analysis of beam and air-sensitive materials using TOF-SIMS, SEM and XPS
- 2023N-doping of electron transport layers in organic light-emitting diodes studied by combining TOF-SIMS and XPS
- 2022High-energy photoelectron spectroscopy of AlN with Cr K$alpha$ excitationcitations
- 2022High-energy photoelectron spectroscopy of Si3N4 thin film on Si with Cr Kα excitationcitations
- 2022Successes and challenges in applications of a laboratory-based scanning XPS/HAXPES instrument
- 2022Correlative microscopy and data analysis for semiconductor technology applications
- 2021Correlative surface microscopy for healthcare technologies
- 2019Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe2 few-layers on SiO2/Sicitations
- 2019Microscopic Mechanisms of Local Interfacial Resistive Switching in LaMnO 3+δcitations
- 2019Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe$_2$ few-layers on SiO$_2$/Sicitations
- 2019CF 4 /H 2 Plasma Cleaning of Graphene Regenerates Electronic Properties of the Pristine Materialcitations
- 2018Correlation of electrical characteristics with interface chemistry and structure in Pt/Ru/PbZr$_{0.52}$ Ti$_{0.48}$O$_3$/Pt capacitors after post metallization annealingcitations
- 2018Electronic properties of transferable atomically thin MoSe 2 /h-BN heterostructures grown on Rh(111)citations
- 2018Electronic properties of transferable atomically thin MoSe2/h-BN heterostructures grown on Rh(111)citations
- 2017Electrical response of Pt/Ru/PbZr 0.52 Ti 0.48 O 3 /Pt capacitor as function of lead precursor excesscitations
- 2016Efficient evaluation of epitaxial MoS2 on sapphire by direct band structure imaging
- 2015Core double-shell cobalt/graphene/polystyrene magnetic nanocomposites synthesized by in situ sonochemical polymerizationcitations
- 2009Spatially resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patternscitations
- 2009Orientation-dependent work function of in situ annealed strontium titanatecitations
- 2008Orientation-dependent surface composition of in situ annealed strontium titanatecitations
Places of action
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article
Microscopic Mechanisms of Local Interfacial Resistive Switching in LaMnO 3+δ
Abstract
Manganite perovskites exhibit promising resistive switching properties, for which the understanding of the related microscopic physicochemical changes taking place is still rather scarce. In this work the resistance of a LaMnO3+δ thin film has been locally tuned within a range of 2 orders of magnitude using conductive atomic force microscopy. With the use of X-ray photoemission electron microscopy it has been possible to simultaneously unravel composition and work function modification related to changes in the LaMnO3+δ resistance state. The resistance change is found to be triggered by oxygen ions drifting to the surface, where they remain adsorbed. Concomitant to this oxygen displacement, the Mn oxidation state is reduced from +3.6 to +3.1, while the work function decreases by 0.28 eV. We discuss the effect of these physicochemical modifications on the conduction mechanism, which is in agreement with a space-charge-limited conduction (SCLC) mechanism where the current is restrained by the density of traps at the interface. We show that the resistive switching in the material can be described as a change of the transport regime from a trap-free to a trap-controlled SCLC, depending on the oxygen content in the material.