| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Burriel, Mónica
Université Grenoble Alpes
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Optimizing YSZ Electrolyte Deposition via MOCVD for Enhanced Thin Film Solid Oxide Cells ; Optimisation de la déposition d'electrolyte de YSZ par MOCVD pour des cellules à oxydes solides en couche mince performantes
- 2024Tuning the synaptic properties of TiN/La2NiO4+δ/Pt memristive devices by post-deposition annealing
- 2024Impact of the La 2 NiO 4+δ Oxygen Content on the Synaptic Properties of the TiN/La 2 NiO 4+δ /Pt Memristive Devices
- 2024Impact of the La2NiO4+d oxygen content on the synaptic properties of the TiN/La2NiO4+d/Pt memristive devices
- 2024A self-assembled multiphasic thin film as an oxygen electrode for enhanced durability in reversible solid oxide cellscitations
- 2023Non-Volatile Bipolar TiN/LaMnO3/Pt Memristors with Optimized Performancecitations
- 2022A cobaltite-based thin film nanocomposite funcional layer wiht enhanced electrochemical stability for solid oxide cells
- 2022Nanostructured La 0.75 Sr 0.25 Cr 0.5 Mn 0.5 O 3 -Ce 0.8 Sm 0.2 O 2 Heterointerfaces as All-Ceramic Functional Layers for Solid Oxide Fuel Cell Applicationscitations
- 2022Tailored nano-columnar La2NiO4 cathodes for improved electrode performancecitations
- 2022Structural defects improve the memristive characteristics of epitaxial La$_{0.8}$Sr$_{0.2}$MnO$_ {3-delta}$ based devicescitations
- 2022Nanostructured La0.75Sr0.25Cr0.5Mn0.5O3–Ce0.8Sm 0.2O2 Heterointerfaces as All-Ceramic Functional Layers for Solid Oxide Fuel Cell Applicationscitations
- 2022La$_2$NiO$_{4+delta}$ ‐based memristive devices integrated on Si‐based substratescitations
- 2019Microscopic Mechanisms of Local Interfacial Resistive Switching in LaMnO 3+δcitations
- 2016Rational design of hierarchically nanostructured electrodes for solid oxide fuel cellscitations
- 2010Influence of the Microstructure on the High-Temperature Transport Properties of GdBaCo2O5.5+δ Epitaxial Filmscitations
- 2010BSCF epitaxial thin films: Electrical transport and oxygen surface exchangecitations
- 2008Electrical conductivity and oxygen exchange kinetics of La2NiO4+ thin films grown by chemical vapor depositioncitations
Places of action
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article
Microscopic Mechanisms of Local Interfacial Resistive Switching in LaMnO 3+δ
Abstract
Manganite perovskites exhibit promising resistive switching properties, for which the understanding of the related microscopic physicochemical changes taking place is still rather scarce. In this work the resistance of a LaMnO3+δ thin film has been locally tuned within a range of 2 orders of magnitude using conductive atomic force microscopy. With the use of X-ray photoemission electron microscopy it has been possible to simultaneously unravel composition and work function modification related to changes in the LaMnO3+δ resistance state. The resistance change is found to be triggered by oxygen ions drifting to the surface, where they remain adsorbed. Concomitant to this oxygen displacement, the Mn oxidation state is reduced from +3.6 to +3.1, while the work function decreases by 0.28 eV. We discuss the effect of these physicochemical modifications on the conduction mechanism, which is in agreement with a space-charge-limited conduction (SCLC) mechanism where the current is restrained by the density of traps at the interface. We show that the resistive switching in the material can be described as a change of the transport regime from a trap-free to a trap-controlled SCLC, depending on the oxygen content in the material.