| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ross, Glenn
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (35/35 displayed)
- 2024Scaling of piezoelectric in-plane NEMS : Towards nanoscale integration of AlN-based transducer on vertical sidewallscitations
- 2024Electromigration Reliability of Cu3Sn Microbumps for 3D Heterogeneous Integration
- 2024Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabricationcitations
- 2024Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfacescitations
- 2024Investigative characterization of delamination at TiW-Cu interface in low-temperature bonded interconnectscitations
- 2023Impact of Inherent Design Limitations for Cu–Sn SLID Microbumps on Its Electromigration Reliability for 3D ICscitations
- 2023Achieving low-temperature wafer level bonding with Cu-Sn-In ternary at 150 °Ccitations
- 2023Co, In, and Co–In alloyed Cu6Sn5 interconnects: Microstructural and mechanical characteristicscitations
- 2023In-Plane AlN-based Actuator: Toward a New Generation of Piezoelectric MEMScitations
- 2022Investigation of the microstructural evolution and detachment of Co in contact with Cu–Sn electroplated silicon chips during solid-liquid interdiffusion bondingcitations
- 2022Unlocking the Potential of Piezoelectric Films Grown on Vertical Surfaces for Inertial MEMScitations
- 2022Finite element simulation of solid-liquid interdiffusion bonding process: Understanding process dependent thermomechanical stresscitations
- 2022Finite element simulation of solid-liquid interdiffusion bonding processcitations
- 2022Aluminium corrosion in power semiconductor devicescitations
- 2021Characterization of AlScN-based multilayer systems for piezoelectric micromachined ultrasound transducer (pMUT) fabricationcitations
- 2021Characterization of AlScN-based multilayer systems for piezoelectric micromachined ultrasound transducer (pMUT) fabricationcitations
- 2021Wafer Level Solid Liquid Interdiffusion Bondingcitations
- 2021Stability and residual stresses of sputtered wurtzite AlScN thin filmscitations
- 2021Characterization of AlScN-Based Multilayer Systems for Piezoelectric Micromachined Ultrasound Transducer (pMUT) Fabricationcitations
- 2021A humidity-induced novel failure mechanism in power semiconductor diodescitations
- 2021Low-temperature Metal Bonding for Optical Device Packagingcitations
- 2020The impact of residual stress on resonating piezoelectric devicescitations
- 2020The impact of residual stress on resonating piezoelectric devicescitations
- 2020MOCVD Al(Ga)N Insulator for Alternative Silicon-On-Insulator Structurecitations
- 2020Metalorganic chemical vapor deposition of aluminum nitride on vertical surfacescitations
- 2019Intermetallic Void Formation in Cu-Sn Micro-Connects
- 2019The Role of Ultrafine Crystalline Behavior and Trace Impurities in Copper on Intermetallic Void Formationcitations
- 2018Process Integration and Reliability of Wafer Level SLID Bonding for Poly-Si TSV capped MEMScitations
- 2018The effect of platinum contact metallization on Cu/Sn bondingcitations
- 2018Stability of Piezoelectric Al1-xScxN Thin Films
- 2017XRD and ToF-SIMS study of intermetallic void formation in Cu-Sn micro-connectscitations
- 2017Gigahertz scanning acoustic microscopy analysis of voids in Cu-Sn micro-connectscitations
- 2017Key parameters influencing Cu-Sn interfacial void formation
- 2016Void formation and its impact on Cu-Sn intermetallic compound formationcitations
- 2014Void formation in Cu-Sn SLID bonding for MEMScitations
Places of action
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article
The Role of Ultrafine Crystalline Behavior and Trace Impurities in Copper on Intermetallic Void Formation
Abstract
In the microelectronic component industry, because of the miniaturization of functional units, the interaction of materials and interfaces play a much more significant role in their performance. The result of this is that ultrafine crystalline and trace impurity behavior impact a device’s operation to a much greater extent. This is the case with micro-connects for 3D integration, such as micro-bumps. Any unwanted crystalline behavior or interfacial segregated impurities can drastically alter a micro-connect’s performance, with a particular issue being intermetallic void formation, often known as Kirkendall voiding. Currently, it is unclear under what conditions voids form and how to prevent them. This work studies the microstructural and compositional differences between samples with different voiding densities. Results show that samples that exhibit an ultrafine crystalline have a higher propensity to exhibit voiding. Also, there is a high concentration of trace impurities located in the electrochemically deposited Cu layer. After isothermal annealing, high concentrations of impurities are located at the interface between Cu and the Cu–Sn intermetallic compound of Cu3Sn. An alternative explanation to the traditional Kirkendall void formation theory is presented. The explanation is based on the interaction of trace impurities from the electroplating process and the microstructural evolution.