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Xu, Bohan
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Publications (7/7 displayed)
- 2024Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO₂citations
- 2024Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO<sub>2</sub>citations
- 2023Strain as a global factor in stabilizing the ferroelectric properties of ZrO 2citations
- 2023Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Filmscitations
- 2023Influence of the ozone dose time during atomic layer deposition on the ferroelectric and pyroelectric properties of 45 nm-thick ZrO 2 filmscitations
- 2022Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Filmscitations
- 2022Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Filmscitations
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article
Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Films
Abstract
<p>Over a decade ago, ferroelectricity was discovered in doped HfO<sub>2</sub> thin films. The HfO<sub>2</sub>-based thin films have attracted much attention due to their remarkable scalability and CMOS compatibility. Other than the HfO<sub>2</sub>-based thin films, the undoped ZrO<sub>2</sub> thin films are understudied despite their commonly reported antiferroelectric behavior. However, being of the same fluorite structure as HfO<sub>2</sub>-based thin films, the undoped ZrO<sub>2</sub> also displayed considerable ferroelectricity as demonstrated in recent studies. In this work, 45 nm-thick polycrystalline undoped ZrO<sub>2</sub> films are synthesized using atomic layer deposition with different ozone dose times. The ZrO<sub>2</sub> films are crystallized after atomic layer deposition at 350 °C without anneals. In general, the longer ozone dose time causes a lower in-plane tensile stress and oxygen vacancy content, which help facilitate an irreversible non-polar tetragonal to polar orthorhombic phase transition with electric-field cycling. However, the lower in-plane tensile stress and oxygen vacancy content also stabilize the monoclinic phase so that a long ozone dose time (>17.5 s) reduces the ferroelectric behavior. After wake-up cycles, the ZrO<sub>2</sub> thin film with an ozone dose time of 17.5 s exhibits a remanent polarization of 6 μC·cm<sup>-2</sup> and a pyroelectric coefficient of −35 μC·K<sup>-1</sup>·m<sup>-2</sup>. Moreover, the wake-up behavior is consistent between the ferroelectric and pyroelectric response. As essential factors in optimizing the growth of fluorite-structure thin films for ferroelectric applications, the in-plane tensile stress and oxygen vacancy content significantly influence the ferroelectric and pyroelectric properties. Additionally, the low thermal budget for processing ferroelectric ZrO<sub>2</sub> thin films is valuable for semiconductor back-end-of-line processes.</p>