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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Søgaard, Nicolaj Brink
Aarhus University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2024Towards non-inert synthesis and characterization of Ge1-xSnx nanoparticles
- 2023Isothermal Heteroepitaxy of Ge1-xSnx Structures for Electronic and Photonic Applicationscitations
- 2022(Si)GeSn Isothermal Multilayer Growth for Specific Applications Using GeH<sub>4</sub> and Ge<sub>2</sub>H<sub>6</sub>
Places of action
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article
Isothermal Heteroepitaxy of Ge1-xSnx Structures for Electronic and Photonic Applications
Abstract
<p>Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In the case of Ge<sub>1-x</sub>Sn<sub>x</sub> alloys, the growth is particularly demanding since the lattice strain and the process temperature greatly impact the composition of the epitaxial layers. In this paper, the realization of high-quality pseudomorphic Ge<sub>1-x</sub>Sn<sub>x</sub> layers with Sn content ranging from 6 at. % up to 15 at. % using isothermal processes in an industry-compatible reduced-pressure chemical vapor deposition reactor is presented. The epitaxy of Ge<sub>1-x</sub>Sn<sub>x</sub> layers has been optimized for a standard process offering a high Sn concentration at a large process window. By varying the N<sub>2</sub> carrier gas flow, isothermal heterostructure designs suitable for quantum transport and spintronic devices are obtained.</p>