| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Capellini, Giovanni
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Full Picture of Lattice Deformation in a Ge<sub>1 − x</sub>Sn<sub>x</sub> Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxycitations
- 2024High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THzcitations
- 2024Full Picture of Lattice Deformation in a Ge 1-x Sn x Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2024High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THzcitations
- 2024The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale
- 2023Terahertz subwavelength sensing with bio-functionalized germanium fano-resonators
- 2023Isothermal Heteroepitaxy of Ge1-xSnx Structures for Electronic and Photonic Applicationscitations
- 2023Isothermal Heteroepitaxy of Ge 1- x Sn x Structures for Electronic and Photonic Applicationscitations
- 2022Terahertz subwavelength sensing with bio-functionalized germanium fano-resonatorscitations
- 2022Biocompatibility and antibacterial properties of TiCu(Ag) thin films produced by physical vapor deposition magnetron sputteringcitations
- 2022Biocompatibility and antibacterial properties of TiCu(Ag) thin films produced by physical vapor deposition magnetron sputteringcitations
- 2018Advanced GeSn/SiGeSn Group IV Heterostructure Laserscitations
- 2018Advanced GeSn/SiGeSn Group IV Heterostructure Laserscitations
- 2018Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instabilitycitations
- 2018Antiphase boundaries in InGaP/SiGe/Si : structural and optical properties
- 2018Photoluminescence from GeSn nano-heterostructurescitations
- 2017Fully coherent Ge islands growth on Si nano-pillars by selective epitaxycitations
- 2017Strain relaxation in epitaxial GaAs/Si (0 0 1) nanostructurescitations
- 2017Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPEcitations
- 2016Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillarscitations
- 2015Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Sicitations
- 2015CMOS-compatible optical switching concept based on strain-induced refractive-index tuning
- 2007GeSi Intermixing in Ge Nanostructures on Si(111): An XAFS versus STM Studycitations
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article
Isothermal Heteroepitaxy of Ge1-xSnx Structures for Electronic and Photonic Applications
Abstract
<p>Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In the case of Ge<sub>1-x</sub>Sn<sub>x</sub> alloys, the growth is particularly demanding since the lattice strain and the process temperature greatly impact the composition of the epitaxial layers. In this paper, the realization of high-quality pseudomorphic Ge<sub>1-x</sub>Sn<sub>x</sub> layers with Sn content ranging from 6 at. % up to 15 at. % using isothermal processes in an industry-compatible reduced-pressure chemical vapor deposition reactor is presented. The epitaxy of Ge<sub>1-x</sub>Sn<sub>x</sub> layers has been optimized for a standard process offering a high Sn concentration at a large process window. By varying the N<sub>2</sub> carrier gas flow, isothermal heterostructure designs suitable for quantum transport and spintronic devices are obtained.</p>