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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Buca, Dan
Forschungszentrum Jülich
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Full Picture of Lattice Deformation in a Ge<sub>1 − x</sub>Sn<sub>x</sub> Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024Full Picture of Lattice Deformation in a Ge 1-x Sn x Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2024The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale
- 2023Isothermal Heteroepitaxy of Ge1-xSnx Structures for Electronic and Photonic Applicationscitations
- 2023Isothermal Heteroepitaxy of Ge 1- x Sn x Structures for Electronic and Photonic Applicationscitations
- 2022(Si)GeSn Isothermal Multilayer Growth for Specific Applications Using GeH<sub>4</sub> and Ge<sub>2</sub>H<sub>6</sub>
- 2020(Invited) Tensile Strain Engineering and Defects Management in GeSn Laser Cavitiescitations
- 2018Advanced GeSn/SiGeSn Group IV Heterostructure Laserscitations
- 2017Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contactscitations
- 2013Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion–crystallization processcitations
- 2013Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealingcitations
- 2010Elastic strain and dopant activation in ion implanted strained Si nanowirescitations
Places of action
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article
Isothermal Heteroepitaxy of Ge1-xSnx Structures for Electronic and Photonic Applications
Abstract
<p>Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In the case of Ge<sub>1-x</sub>Sn<sub>x</sub> alloys, the growth is particularly demanding since the lattice strain and the process temperature greatly impact the composition of the epitaxial layers. In this paper, the realization of high-quality pseudomorphic Ge<sub>1-x</sub>Sn<sub>x</sub> layers with Sn content ranging from 6 at. % up to 15 at. % using isothermal processes in an industry-compatible reduced-pressure chemical vapor deposition reactor is presented. The epitaxy of Ge<sub>1-x</sub>Sn<sub>x</sub> layers has been optimized for a standard process offering a high Sn concentration at a large process window. By varying the N<sub>2</sub> carrier gas flow, isothermal heterostructure designs suitable for quantum transport and spintronic devices are obtained.</p>