| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Simanjuntak, Firman Mangasa
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Forming-free and non-linear resistive switching in bilayer HfOx/TaOx memory devices by interface-induced internal resistancecitations
- 2024Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealingcitations
- 2022Annealing induced cation diffusion in TaOx-based memristor and its compatibility for back-end-of-line post-processingcitations
- 2022Effects of surface polarity on the structure and magnetic properties of epitaxial h-YMnO3 thin films grown on MgO substratescitations
- 2021Practical approach to induce analog switching behavior in memristive devices: digital-to-analog transformationcitations
- 2021Crafting the multiferroic BiFeO3-CoFe2O4 nanocomposite for next-generation devices: a reviewcitations
- 2021Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applicationscitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2 -based resistive switching random access memory devicescitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devicescitations
- 2018Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layercitations
- 2017Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cellcitations
Places of action
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article
Effects of surface polarity on the structure and magnetic properties of epitaxial h-YMnO3 thin films grown on MgO substrates
Abstract
YMnO3 (YMO) thin film is one of the highly studied multiferroic materials due to its tunable crystalline structure via misfit strain from the substrate. This tunability involves intriguing physical phenomena that encourage further explorations for fundamental research and practical applications. The configuration of the initial atomic layers during the growth of YMO thin films plays a key role in determining their physical properties. In the present research, the correlation between the substrate’s polarity and the misfit strain of the YMO films is studied comprehensively. The results showed that despite the YMO films grown on MgO (100) and MgO (111) being under the same growth conditions and having resulted in the same hexagonal crystal structure (h-YMO), the films do exhibit distinctly different microstructures, electronic structures, and magnetic properties. We suggest that the extent of charge accumulation induced by the surface polarity of the substrates may have resulted in a substantially different intermixing feature at the h-YMO/substrate interfaces, which, in turn, alters the structure and thus the physical properties of the films. Our results open up the possibility of manipulating the h-YMO thin film’s magnetic properties by interfacial engineering without significantly altering the structure of the films which could benefit the fabrication efficiency for various next-generation electronics.