| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Lind, Erik
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2023Low temperature atomic hydrogen annealing of InGaAs MOSFETscitations
- 2023Time evolution of surface species during the ALD of high-k oxide on InAscitations
- 2023Time evolution of surface species during the ALD of high-k oxide on InAscitations
- 2023Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substratescitations
- 2023Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungstencitations
- 2022Oxygen relocation during HfO2 ALD on InAscitations
- 2022Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance.
- 2022Template-Assisted Selective Epitaxy of InAs on W
- 2021Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performancecitations
- 2020Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studiescitations
- 2020Atomic Layer Deposition of Hafnium Oxide on InAscitations
- 2016ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatmentcitations
- 2016ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatmentcitations
- 2014InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.citations
- 2014Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistorscitations
- 2013Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
- 2013Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistorscitations
- 2012Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substratescitations
- 2012High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFETcitations
- 2011High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2011Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopycitations
- 2004Resonant tunneling permeable base transistor based pulsed oscillator
- 2004Tunneling Based Electronic Devices
Places of action
| Organizations | Location | People |
|---|
article
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
Abstract
Thin vertical nanowires based on III-V compound semiconductors are viable candidates as channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to attractive carrier transport properties. However, for improved performance in terms of current density as well as contact resistance, adequate characterization techniques for resolving doping distribution within thin vertical nanowires are required. We present a novel method of axially probing the doping profile by systematically changing the gate position, at a constant gate length Lg of 50 nm and a channel diameter of 12 nm, along a vertical nanowire MOSFET and utilizing the variations in threshold voltage VT shift (∼100 mV). The method is further validated using the well-established technique of electron holography to verify the presence of the doping profile. Combined, device and material characterizations allow us to in-depth study the origin of the threshold voltage variability typically present for metal organic chemical vapor deposition (MOCVD)-grown III-V nanowire devices.