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Abbas, Waseem
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Publications (4/4 displayed)
- 2021Critical Effect of Film-Electrode Interface on Enhanced Energy Storage Performance of BaTiO3-BiScO3Ferroelectric Thin Filmscitations
- 2021High Energy Efficiency and Thermal Stability of BaTiO3-BiScO3 Thin Films Based on Defects Engineeringcitations
- 2020Oxygen octahedral tilt ordering in (Na1/2Bi1/2)TiO3 ferroelectric thin filmscitations
- 2020High energy storage efficiency and thermal stability of A-site-deficient and 110-textured BaTiO3–BiScO3 thin filmscitations
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article
High Energy Efficiency and Thermal Stability of BaTiO3-BiScO3 Thin Films Based on Defects Engineering
Abstract
ABO<sub>3</sub> perovskite ferroelectric thin films have gained wide attention in recent years for high density capacitive energy storage applications. In this regard, BaTiO<sub>3</sub>-BiMeO<sub>3</sub>, where Me is a metal cation, are particularly promising materials because of their high electrical polarization and low hysteresis losses. However, for a broader adoption of BaTiO<sub>3</sub>-BiMeO<sub>3</sub> thin films in advanced electronics applications, it is necessary to maintain good thermal stability in addition to high energy density and energy storage efficiency. In this work, we show that a superior combination of these characteristics can be obtained through the control of different defect concentrations, viz., A-site cation vacancies (V<sub>A</sub>) and B-site ionic substitutions (Me<sub>Ti</sub>). It is shown for BaTiO<sub>3</sub>-BiScO<sub>3</sub> thin films that an optimum combination of V<sub>A</sub> and Sc<sub>Ti</sub> leads to a high energy storage density of 40.5 J cm<sup>-3</sup> and an efficiency higher than 85%, which could be maintained from room temperature to 200 °C. A mechanistic understanding of the enhanced energy storage performance based on the synergistic effect of random fields introduced by A-site vacancies and strong hole trapping by Sc<sub>Ti</sub> acceptor centers is proposed. Perovskite ferroelectric thin films capable of maintaining high performance at high temperatures may facilitate the advancement of power electronics applications in harsh environments.