| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Waag, Andreas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlNcitations
- 2021Point defect-induced UV-C absorption in aluminum nitride epitaxial layers grown on sapphire substrates by metal-organic chemical vapor deposition
- 2021Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chipscitations
- 2020Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structurescitations
- 2020Plasma profiling time-of-flight mass spectrometry for fast elemental analysis of semiconductor structures with depth resolution in the nanometer rangecitations
- 2019Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronicscitations
- 2018Defect generation by nitrogen during pulsed sputter deposition of GaNcitations
- 20183D GaN Fins as a Versatile Platform for a-Plane-Based Devices
- 2017Enhanced Photoelectrochemical Behavior of H-TiO2 Nanorods Hydrogenated by Controlled and Local Rapid Thermal Annealing.citations
- 2016The influence of MOVPE growth conditions on the shell of core-shell GaN microrod structurescitations
- 2010GaN and ZnO nanostructurescitations
- 2001BeCdSe as a ternary alloy for blue-green optoelectronic applicationscitations
- 2001Spin Manipulation Using Magnetic II–VI Semiconductorscitations
- 2000Semimagnetic Resonant Tunneling Diodes for Electron Spin Manipulation
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article
Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips
Abstract
Gallium nitride (GaN) film delamination is an important process during the fabrication of GaN light-emitting diodes (LEDs) and laser diodes. Here, we utilize 520 nm femtosecond laser pulses, exploiting nonlinear absorption rather than single-photon absorption such as in conventional laser lift-off (LLO) employing excimer or Q-switched laser sources. The focus of this study is to investigate the influence of laser scanning speed and integrated fluence corresponding to laser energy per area during the LLO processing of GaN LED chips and their resulting structural properties. Because both the sapphire substrate and InGaN/GaN heterostructures are fully transparent to the emission of the laser system, a key question is related to the impact of laser pulses on the quality of a thin film structure. Therefore, several characterization methods (i.e., scanning electron microscopy, atomic force microscopy, X-ray diffraction, Raman spectroscopy, and electroluminescence spectroscopy) were employed to understand the material modifications made by femtosecond LLO (fs-LLO). We demonstrated that by adjusting the laser scanning speed, smooth GaN surfaces and good crystal quality could be obtained regardless of the existing delamination of metal contact, which then slightly downgraded the LED performance. Here, the integrated fluence level was set in the range of 2.6-4.4 J/cm<sup>2</sup> to enable the fs-LLO process. Moreover, two mitigation strategies were developed and proven to improve the optoelectrical characteristics of the lifted-off LEDs (i.e., modification of the processing step related to the metal creation and reduction of laser energy).© 2021 American Chemical Society