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Kersch, Alfred
Hochschule München University of Applied Sciences
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2024Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO₂citations
- 2024Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO<sub>2</sub>citations
- 2023Strain as a global factor in stabilizing the ferroelectric properties of ZrO 2citations
- 2022Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Filmscitations
- 2022Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2-Based Filmscitations
- 2020Influence of oxygen content on the structure and reliability of ferroelectric HfxZr1−xO2 layerscitations
- 2018Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO₂: a first principles studycitations
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article
Influence of oxygen content on the structure and reliability of ferroelectric HfxZr1−xO2 layers
Abstract
<p>Although some years have passed since the discovery of the ferroelectric phase in HfO<sub>2</sub> and ZrO<sub>2</sub> and their solid solution system Hf<sub>x</sub>Zr<sub>1</sub>−<sub>x</sub>O<sub>2</sub>, the details of the emergence of this phase are still under investigation. Surface energy contribution, dopant inclusion, residual stress, electric field, and oxygen vacancies have been proposed and studied as potential factors that can influence the phase stabilization. In this work, Hf<sub>x</sub>Zr<sub>1</sub>−<sub>x</sub>O<sub>2</sub> layers with different Hf/Zr ratios are deposited via atomic layer deposition (ALD) and physical vapor deposition (PVD) and the amount of oxygen that is supplied during deposition is varied. Results are compared for the two deposition techniques for undoped HfO<sub>2</sub> layers. Electrical and structural analysis for the atomic layer-deposited films with different Zr contents and O<sub>2</sub> contents is then performed and the reliability of the films when integrated into capacitors is addressed. The results are correlated to the composition of the layers and a model for layer crystallization is suggested.</p>