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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Aghajamali, Alireza
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2020Band gap engineering in constant total length nonmagnetized plasma-dielectric multilayerscitations
- 2020Epitaxial Formation of SiC on (100) Diamondcitations
- 2019Transferability in interatomic potentials for carboncitations
- 2018Unphysical nucleation of diamond in the extended cutoff Tersoff potentialcitations
- 2017Double-negative multilayer containing an extrinsic random layer thickness magnetized cold plasma photonic quantum-well defectcitations
- 2016Study of optical reflectance properties in 1D annular photonic crystal containing double negative (DNG) metamaterialscitations
- 2016Near-infrared tunable narrow filter properties in a 1D photonic crystal containing semiconductor metamaterial photonic quantum-well defectcitations
- 2014Effects of loss factors on zero permeability and zero permittivity gaps in 1D photonic crystal containing DNG materialscitations
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article
Epitaxial Formation of SiC on (100) Diamond
Abstract
<p>We demonstrate locally the coherent formation of silicon carbide (SiC) on diamond, a rare example of heteroepitaxy with a lattice mismatch that exceeds 20%. High-resolution transmission electron microscopy confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the interface wherein the large lattice strain is alleviated via point dislocations in a two-dimensional plane without forming extended defects in three dimensions. The possibility of realizing heterojunctions of technologically important materials such as SiC with diamond offers promising pathways for thermal management of high-power electronics. At a fundamental level, the study redefines our understanding of SiC and diamond heteroepitaxy and furthers our understanding of large lattice mismatched interfaces.</p>