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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hone, James
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Topics
Publications (10/10 displayed)
- 2024Width-Dependent Growth of Atomically Thin Quantum Nanoribbons
- 2022Chemical Vapor-Deposited Graphene on Ultraflat Copper Foils for van der Waals Hetero-Assemblycitations
- 2022Chemical Vapor-Deposited Graphene on Ultraflat Copper Foils for van der Waals Hetero-Assemblycitations
- 2021Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materialscitations
- 2019Magic continuum in twisted bilayer WSe2
- 2019Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Controlcitations
- 2016Electron optics with p-n junctions in ballistic graphenecitations
- 2015Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructurescitations
- 2015Photonic and Plasmonic Guided Modes in Graphene-Silicon Photonic Crystalscitations
- 2015Photonic and Plasmonic Guided Modes in Graphene-Silicon Photonic Crystalscitations
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article
Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control
Abstract
Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above 1013 /cm2 to below 1011 /cm2. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.