| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Santos, Elton J. G.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Magnetic Imaging and Domain Nucleation in CrSBr Down to the 2D Limitcitations
- 2023Magnetic properties of intercalated quasi-2D Fe3-xGeTe2 van der Waals magnetcitations
- 2019Ultrahigh-current-density niobium disulfide catalysts for hydrogen evolutioncitations
- 2019Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Controlcitations
- 2018Phase transition and electronic structure evolution of MoTe2 induced by W substitutioncitations
- 2018Mechanism of Gold-Assisted Exfoliation of Centimeter-Sized Transition-Metal Dichalcogenide Monolayerscitations
- 2018Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides
- 2017Aggregation-induced emission in lamellar solids of colloidal perovskite quantum wellscitations
- 2017Molecular Arrangement and Charge Transfer in C60/Graphene Heterostructurescitations
- 2017Molecular Arrangement and Charge Transfer in C60/Graphene Heterostructurescitations
- 2015Structural and Electrical Investigation of C 60 –Graphene Vertical Heterostructurescitations
- 2013First-Principles Study of the Electronic and Magnetic Properties of Defects in Carbon Nanostructurescitations
- 2013Magnetoelectric effect in functionalized few-layer graphenecitations
Places of action
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article
Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control
Abstract
Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above 1013 /cm2 to below 1011 /cm2. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.